Datasheet > BLL8H1214LS-250U

BLL8H1214LS-250U

更新时间： 2024-01-23 08:15:48

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描述
RF FET LDMOS 100V 17DB SOT502B

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BLL8H1214LS-250U 数据手册

BLL8H1214L-250;

BLL8H1214LS-250

LDMOS L-band radar power transistor

Rev. 3 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to

1.4 GHz range.

Table 1.

Test information

Typical RF performance at T_case= 25 C; t_p= 300 s;  = 10 %; I_Dq= 100 mA; in a class-AB

production test circuit.

Test signal

V_DS

(V)

P_L

G_p

(dB) (%)

17 55

_D

t_r

t_f

(GHz)

(W)

250

(ns)

pulsed RF

1.2 to 1.4 50

1.2 Features and benefits

 Easy power control

 Integrated dual side ESD protection

 High flexibility with respect to pulse formats

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (1.2 GHz to 1.4 GHz)

 Internally matched for ease of use

 Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

(RoHS)

1.3 Applications

 L-band power amplifiers for radar applications in the 1.2 GHz to 1.4 GHz frequency

range

12 3 4 5 6 7...13

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