Datasheet > BLL9G1214L-600U

BLL9G1214L-600U

更新时间： 2024-01-02 10:42:24

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描述
BLL9G1214L-600/SOT502/TRAY

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BLL9G1214L-600U 数据手册

BLL9G1214L-600;

BLL9G1214LS-600

LDMOS L-band radar power transistor

Rev. 2 — 6 November 2018

Product data sheet

1. Product profile

1.1 General description

600 W LDMOS power transistor for L-band radar applications in the frequency range from

1.2 GHz to 1.4 GHz.

Table 1.

Typical performance

Typical RF performance at T_case= 25 °C; t_p= 300 μs; δ = 10 %; I_Dq= 400 mA; in a class-AB demo

test circuit.

Test signal

V_DS

(V)

P_L(3dB)

(W)

G_p

η_D

(GHz)

(dB)

(%)

pulsed RF

1.2 to 1.4

600

1.2 Features and benefits

 High efficiency

 Excellent ruggedness

 Designed for L-band operation

 Excellent thermal stability

 Easy power control

 Integrated dual sided ESD protection enables excellent off-state isolation

 High flexibility with respect to pulse formats

 Internally matched for ease of use

 For RoHS compliance see the product details on the Ampleon website

1.3 Applications

 L-band radar applications in the frequency range from 1.2 GHz to 1.4 GHz

12 3 4 5 6 7...13

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