Datasheet > BL1N60F

BL1N60F

更新时间： 2024-04-09 19:00:55

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
3页	365K
描述
1.2A, 600V, 40W, N Channel, Power MOSFETs

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BL1N60F 数据手册

Product Specification

N-Channel Enhancement Mode Field Effect Transistor

BL1N60F

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

3. L=64mH, IAS=1.2A, VDD=50V, RG=25Ω, Starting TJ =25°C

4. ISD≤1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ =25°C

ELECTRICAL CHARACTERISTICS

MIN

Parameter

Symbol

Test conditions

TYP MAX UNIT

Drain-Source Breakdown Voltage

V_(BR)DSS

V_GS=0V,I_D=250μA

600

△BV_DSS

△T_J

Bvdss Temperature Coefficient

I_D=250mA,

0.4

V/℃

Gate Threshold Voltage

V_GS(TH)

V_DS= V_GS, I_D=250mA

V_DS=600V, V_GS=0V

V_DS=480V, Ta=125℃

V_GS=10V,I_D=0.6A

μA

Drain to Source Leakage Current

Static drain-Source on-resistance

I_DSS

100

R_DS(ON)

9.3 11.5

Gate-body Leakage

Forward

Reverse

V_GS=±30V

I_GSS

100

Forward Transconductance

Input Capacitance

V_DS=50V, I_D=0.6A

gfs

0.9

C_iss

C_oss

120 150-

V_GS= 0V V_DS= 25V

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Rise Time

3.0

4.0

6.0

C_rss

td_(ON)

I_D=1.2A V_DD= 300V

_GS= 10V

Turn-Off Delay Time

Fall Time

td_(OFF)

5.0

1.0

2.6

160

Total Gate Charge

Q_g

I_D=1.2A V_DD=480V

_GS= 10V

Gate to Source Charge

Gate to Drain (“Miller”)Charge

Reverse Recovery Time

Q_gs

Q_gd

trr

I_S=1.2A,Tj = 25℃

dIF/dt=100A/us,

VGS=0V

Reverse Recovery Charge

Qrr

0.3

Note: 1. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%

2. Essentially Independent of Operating Temperature

MTM5001A

www.gmesemi.com

123

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