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BGU8004Z PDF预览

BGU8004Z

更新时间: 2024-01-21 20:47:11
品牌 Logo 应用领域
恩智浦 - NXP 全球定位系统
页数 文件大小 规格书
18页 291K
描述
BGU8004 - SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass CSP 6-Pin

BGU8004Z 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:CSP包装说明:0.65 X 0.44 MM, 0.29 MM HEIGHT, WLCSP-6
针数:6Reach Compliance Code:compliant
风险等级:5.83Base Number Matches:1

BGU8004Z 数据手册

 浏览型号BGU8004Z的Datasheet PDF文件第1页浏览型号BGU8004Z的Datasheet PDF文件第2页浏览型号BGU8004Z的Datasheet PDF文件第4页浏览型号BGU8004Z的Datasheet PDF文件第5页浏览型号BGU8004Z的Datasheet PDF文件第6页浏览型号BGU8004Z的Datasheet PDF文件第7页 
BGU8004  
NXP Semiconductors  
SiGe:C LNA MMIC for GPS, GLONASS, Galileo and Compass  
4. Marking  
Table 4.  
Marking codes  
Type number  
Marking code  
BGU8004  
single character, indicating assembly month.[1]  
[1] Month code see Table 5.  
Table 5.  
Calender marking month code  
Double underscore indicate pin 1.  
[1]  
Year  
Month  
J
F
N
Z
B
M
O
b
A
P
d
M
Q
f
J
R
h
F
J
A
T
4
S
U
5
I
O
V
6
N
W
7
D
X
9
2013  
2014  
2015  
M
Y
A
S
3
C
D
E
G
H
J
K
L
[1] Rotates every 3 years.  
5. Limiting values  
Table 6.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VCC  
Parameter  
Conditions  
Min  
Max  
Unit  
V
[1]  
supply voltage  
RF input AC coupled  
VI(ENABLE) < VCC + 0.6 V  
DC, VI(RF_IN) < VCC + 0.6 V  
0.5 +5.0  
0.5 +5.0  
0.5 +5.0  
0.5 +5.0  
[1][2]  
[1][2][3]  
[1][2][3]  
[1]  
VI(ENABLE  
VI(RF_IN)  
VI(RF_OUT)  
Pi  
)
input voltage on pin ENABLE  
input voltage on pin RF_IN  
input voltage on pin RF_OUT  
input power  
V
V
DC, VI(RF_OUT) < VCC + 0.6 V  
f = 1575 MHz  
V
-
10  
55  
dBm  
mW  
Ptot  
total power dissipation  
storage temperature  
junction temperature  
Tsp d 130 qC  
-
Tstg  
65  
+150 qC  
Tj  
-
-
150  
qC  
VESD  
electrostatic discharge voltage Human Body Model (HBM) According to  
ANSI/ESDA/JEDEC standard JS-001  
r2  
kV  
Machine Model (MM) According to JEDEC  
standard JESD22-A115  
-
-
r0.2  
r1  
kV  
kV  
Charged Device Model (CDM) According to  
JEDEC standard JESD22-C101  
[1] Stressed with pulses of 200 ms in duration, with application circuit as in Figure 1.  
[2] Warning: due to internal ESD diode protection, the applied DC voltage should not exceed VCC + 0.6 V and shall not exceed 5.0 V in  
order to avoid excess current.  
[3] The RF input and RF output are AC coupled through internal DC blocking capacitors.  
BGU8004  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2014. All rights reserved.  
Preliminary data sheet  
Rev. 1 — 31 January 2014  
3 of 18  

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