Datasheet > BGU7258

BGU7258

更新时间： 2024-03-03 10:10:19

品牌	Logo	应用领域
恩智浦 - NXP		ISM频段
页数	文件大小	规格书
21页	347K
描述
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass

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BGU7258 数据手册

NXP Semiconductors

BGU7258

5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass

6 Limiting values

Table 5.ꢀLimiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Absolute Maximum Ratings are given as limiting

values of stress conditions during operation, that must not be exceeded under the worst case conditions.

Symbol

V_CC

Parameter

Conditions

Min Max Unit

[1]

[1][2][3]

[1][2]

supply voltage

RF input AC coupled

-0.5 +5.0

V_{I(RF_IN)}

input voltage on pin RF_IN

V_{I(RF_OUT)}input voltage on pin RF_OUT

V_I(CTRL)

T_stg

input voltage on pin CTRL

storage temperature

-40 +150 °C

T_j

junction temperature

150

±2

°C

V_ESD

electrostatic discharge voltage

Human Body Model (HBM); according to the

joint JEDEC/ESDA standard JS-001-2012

Charged Device Model (CDM); according to

JEDEC standard JESD22-C101

±1

P_i

input power

f = 5500 MHz; CW

[1]

gain mode; V_CC= 3.3 V

bypass mode; V_CC= 3.3 V

dBm

[1] Stressed with pulses of 200 ms in duration in an application circuit as depicted in Figure 34.

[2] Warning: due to internal ESD diode protection, the applied DC voltage should not exceed V_CC+ 0.6 V and should not exceed 5.0 V in order to avoid

excess current.

[3] The RF input and RF output are AC-coupled through an internal DC blocking capacitor.

7 Thermal characteristics

Table 6.ꢀThermal characteristics

Symbol Parameter

Conditions

Typ

Unit

R_th(j-case)thermal resistance from junction to case

250

K/W

BGU7258

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 3 — 29 August 2018

4 / 21

1 2 345 6 7...21

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