BGU7062
NXP Semiconductors
Analog high linearity low noise variable gain amplifier
8. Characteristics
Table 7.
Characteristics high gain mode
GS1 = LOW; GS2 = HIGH (see Table 9); VCC1 = 5 V; VCC2 = 5 V; f = 1750 MHz; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter
Conditions
Min Typ
Max Unit
ICC(tot)
total supply current
190 220
250 mA
Gp(min) minimum power gain
Gp(max) maximum power gain
Vctrl(Gp) = 3.3 V
-
-
-
-
-
-
13.5
37
-
-
-
-
dB
dB
dB
dB
Vctrl(Gp) = 0 V
Gp(flat)
NF
power gain flatness
noise figure
1710 MHz f 1785 MHz; 18 dB Gp 35 dB
Vctrl(Gp) = 0 V (maximum power gain)
Gp = 35 dB
0.3
0.85
0.95 1.1 dB
Gp = 18 dB
5.80
-
dB
IP3I
input third-order intercept point
2-tone; tone-spacing = 1.0 MHz
Gp = 35 dB
0
-
0.8
3.2
3.5
5.0
-
-
-
-
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
Gp = 30 dB
Gp = 29 dB
-
Gp = 18 dB
-
Pi(1dB)
input power at 1 dB gain compression Gp = 35 dB
14 12.8 -
Gp = 30 dB
Gp = 29 dB
Gp = 18 dB
-
-
-
-
-
-
1
7.5
7.0
5.9
30
-
-
-
-
-
-
-
RLin
input return loss
Vctrl(Gp) = 0 V (maximum power gain)
Gp = 35 dB
25
dB
RLout
K
output return loss
Vctrl(Gp) = 0 V (maximum power gain)
0 GHz f 12.75 GHz
17
dB
Rollett stability factor
-
Table 8.
Characteristics low gain mode
GS1 = HIGH; GS2 = LOW (see Table 9); VCC1 = 5 V; VCC2 = 5 V; f = 1750 MHz; Tamb = 25 C; input and output 50 ;
unless otherwise specified. All RF parameters have been characterized at the device RF input and RF output terminals.
Symbol Parameter
ICC(tot) total supply current
Gp(min) minimum power gain
Gp(max) maximum power gain
Conditions
Min Typ Max Unit
165 190 215 mA
Vctrl(Gp) = 3.3 V
-
-
-
-
-
6.6 -
dB
dB
dB
dB
dB
Vctrl(Gp) = 0 V
18.6 -
Gp(flat)
NF
power gain flatness
noise figure
1710 MHz f 1785 MHz; 3 dB Gp 17 dB
0.1
9.8
-
-
Gp = 17 dB
Gp = 3 dB
20.6 -
-
IP3I
input third-order intercept point
2-tone; tone-spacing = 1.0 MHz
Gp = 17 dB
-
-
-
-
20
24
25
28
-
-
-
-
dBm
dBm
dBm
dBm
Gp = 12 dB
Gp = 11 dB
Gp = 3 dB
BGU7062
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Preliminary data sheet
Rev. 1 — 10 August 2012
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