Datasheet > BFW92A_08

BFW92A_08

更新时间： 2024-01-02 10:21:22

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
7页	153K
描述
Silicon NPN Planar RF Transistor

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数据手册

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BFW92A_08 数据手册

^{Not for new design, this product will be obsoleted soon}BFW92A

Vishay Semiconductors

Silicon NPN Planar RF Transistor

Features

• High power gain

• Low noise figure

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

19039

Applications

Wide band RF amplifier up to GHz range.

Electrostatic sensitive device.

Observe precautions for handling.

Marking: BFW92A

Pinning: 1 = Collector, 2 = Emitter, 3 = Base

Mechanical Data

Case: TO-50 Plastic case

Weight: approx. 111 mg

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

V_CBO

Value

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

V_CEO

V_EBO

I_C

2.5

°C

Total power dissipation

Junction temperature

Storage temperature range

T_amb≤ 60 °C

P_tot

T_j

300

150

T_stg

- 55 to + 150

°C

Amplifier 1

Parameter

Test condition

Symbol

R_thJA

Value

300

Unit

K/W

Junction ambient

¹⁾on glass fibre printed board (40 x 25 x 1.5) mm³plated with 35 μm Cu

Electrical DC Characteristics

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

V_CB= 10 V, I_E= 0

_EB= 2.5 V, I_C= 0

_C= 1 mA, I_B= 0

Symbol

I_CBO

I_EBO

Min

Typ.

Max

100

Unit

Collector-base cut-off current

Emitter-base cut-off current

μA

Collector-emitter breakdown

voltage

V_(BR)CEO

Collector-emitter saturation

voltage

I_C= 20 mA, I_B= 2 mA

V_CEsat

0.1

0.6

DC forward current transfer ratio V_CE= 1 V, I_C= 2 mA

h_FE

150

_CE= 1 V, I_C= 25 mA

_CE= 25 V, V_BE= 0

Collector-emitter cut-off current

I_CES

100

μA

Document Number 85041

Rev. 1.5, 08-Sep-08

www.vishay.com

12 3 4 5 6 7

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