生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | compliant | 风险等级: | 5.61 |
最大集电极电流 (IC): | 0.05 A | 配置: | Single |
最小直流电流增益 (hFE): | 25 | 最高工作温度: | 175 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.19 W |
子类别: | Other Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BFWP21 | ETC |
获取价格 |
BFWP21 - Tranzystor krzemowy polowy MOS | |
BFX11 | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | TO-78 | |
BFX15 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 200MA I(C) | TO-78 | |
BFX17 | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package | |
BFX17A | ETC |
获取价格 |
NPN | |
BFX19 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 35V V(BR)CEO | TO-72 | |
BFX20 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 35V V(BR)CEO | TO-118 | |
BFX29 | SEME-LAB |
获取价格 |
PNP SILICON EPITAXIAL TRANSISTOR | |
BFX29 | ONSEMI |
获取价格 |
TRANSISTOR TRANSISTOR,BJT,PNP,60V V(BR)CEO,600MA I(C),TO-5, BIP General Purpose Small Sign | |
BFX29 | NJSEMI |
获取价格 |
Trans GP BJT PNP 60V 0.6A 3-Pin TO-39 |