Datasheet > BFR340L3_07

BFR340L3_07

更新时间： 2024-09-28 08:52:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
6页	52K
描述
NPN Silicon RF Transistor

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中文翻译

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数据手册

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BFR340L3_07 数据手册

BFR340L3

NPN Silicon RF Transistor*

• Low voltage/ Low current operation

• Transition frequency of 14 GHz

• High insertion gain

• Ideal for low current amplifiers and oscillators

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

* Short term description

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFR340L3

TSLP-3-1

1 = B

2 = E

3 = C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CES

CBO

EBO

°C

Base current

Total power dissipation

tot

T ≤ 120°C

150

Junction temperature

Ambient temperature

Storage temperature

-65 ... 150

stg

Thermal Resistance

Parameter

Symbol

Value

Unit

tbd

K/W

Junction - soldering point

thJS

¹Pb-containing package may be available upon special request

²T is measured on the collector lead at the soldering point to the pcb

³For calculation of R

please refer to Application Note Thermal Resistance

thJA

2007-03-30

12 3 4 5 6

中文翻译

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