Datasheet > BFG93A_08

BFG93A_08

更新时间： 2024-01-11 06:05:40

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
4页	103K
描述
Silicon NPN Planar RF Transistor

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中文翻译

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数据手册

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BFG93A_08 数据手册

^{Not for new design, this product will be obsoleted soon}BFG93A

Vishay Semiconductors

Silicon NPN Planar RF Transistor

Features

• High power gain

• Low noise figure

• High transition frequency

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Electrostatic sensitive device.

Applications

Observe precautions for handling.

19217

RF amplifier up to GHz range.

Pinning:

1 = Collector, 2 = Base,

3 = Emitter, 4 = Emitter

Mechanical Data

Case: SOT-143 Plastic case

Weight: approx. 8.0 mg

Marking: R8

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

V_CBO

Value

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

V_CEO

V_EBO

I_C

°C

Total power dissipation

Junction temperature

Storage temperature range

T_amb≤ 60 °C

P_tot

T_j

200

150

T_stg

- 65 to + 150

Maximum Thermal Resistance

Parameter

Test condition

Symbol

R_thJA

Value

450

Unit

K/W

Junction ambient

¹⁾on glass fibre printed board (25 x 20 x 1.5) mm³plated with 35 μm Cu

Electrical DC Characteristics

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

I_CES

I_CBO

Min

Typ.

Max

100

Unit

Collector-emitter cut-off current V_CE= 20 V, V_BE= 0

μA

Collector-base cut-off current

Emitter-base cut-off current

V_CB= 15 V, I_E= 0

_EB= 2 V, I_C= 0

100

μA

I_EBO

Collector-emitter breakdown

voltage

_C= 1 mA, I_B= 0

V_(BR)CEO

Collector-emitter saturation

voltage

_C= 50 mA, I_B= 5 mA

V_CEsat

h_FE

0.1

0.4

DC forward current transfer ratio V_CE= 5 V, I_C= 30 mA

150

Document Number 85076

Rev. 1.3, 08-Sep-08

www.vishay.com

12 3 4

中文翻译

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