BF245C

更新时间： 2024-02-26 15:16:21

品牌	Logo	应用领域
安森美 - ONSEMI		放大器
页数	文件大小	规格书
8页	173K
描述
JFET VHF/UHF Amplifiers N-Channel - Depletion

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中文翻译

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数据手册
替代型号

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BF245C 数据手册

ON Semiconductort

BF245A

BF245B

JFET VHF/UHF Amplifiers

N–Channel — Depletion

MAXIMUM RATINGS

Rating

Drain–Source Voltage

Symbol

Value

±30

Unit

Vdc

Drain–Gate Voltage

Gate–Source Voltage

Drain Current

Vdc

BF244A, BF244B

CASE 29–11, STYLE 22

TO–92 (TO–226AA)

100

mAdc

Forward Gate Current

G(f)

Total Device Dissipation @ T = 25°C

Derate above 25°C

350

2.8

mW/°C

Storage Channel Temperature Range

stg

–65 to +150

°C

3 DRAIN

BF245, BF245A,

BF245B, BF245C

CASE 29–11, STYLE 23

TO–92 (TO–226AA)

GATE

STYLE 22

STYLE 23

1 SOURCE

2 SOURCE

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Gate–Source Breakdown Voltage

—

Vdc

(BR)GSS

(I = 1.0 µAdc, V

= 0)

Gate–Source

(1)

BF245

= 15 Vdc, I = 200 µAdc)

0.4

1.6

3.2

—

7.5

2.2

3.8

7.5

(2)

BF245A, BF244A

BF245B, BF244B

BF245C

Gate–Source Cutoff Voltage

(V = 15 Vdc, I = 10 nAdc)

–ā0.5

—

–ā8.0

Vdc

GS(off)

Gate Reverse Current

(V = 20 Vdc, V

—

5.0

nAdc

GSS

= 0)

ON CHARACTERISTICS

Zero–Gate–Voltage Drain Current

mAdc

DSS

(1)

BF245

= 15 Vdc, V

= 0)

2.0

6.0

—

6.5

(2)

BF245A, BF244A

BF245B, BF244B

BF245C

1. On orders against the BF245, any or all subgroups might be shipped.

2. On orders against the BF244A, any or all subgroups might be shipped.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

June, 2001 – Rev. 0

BF245A/D

12 3 4 5 6 7 8

中文翻译

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BF245C 替代型号

型号	品牌	替代类型	描述	数据表
2N5245	FAIRCHILD	功能相似	N-Channel RF Amplifier
BF245B	FAIRCHILD	功能相似	N-Channel Amplifiers
BF244B	FAIRCHILD	功能相似	N-Channel RF Amplifier

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