BDV96

更新时间： 2024-09-29 06:41:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	111K
描述
isc Silicon PNP Power Transistor

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中文翻译

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技术参数
数据手册

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BDV96 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Base Number Matches：	1

BDV96 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

BDV92/94/96

DESCRIPTION

·Collector Current -I_C= -10A

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= -45V(Min)- BDV92; -60V(Min)- BDV94

-80V(Min)- BDV96

·Complement to Type BDV91/93/95

APPLICATIONS

·Designed for use in audio output stages and general

amplifier and switching applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

-60

UNIT

BDV92

BDV94

BDV96

BDV92

BDV94

BDV96

Collector-Emitter

V_CER

-80

Voltage

-100

-60

Collector-Emitter

Voltage

V_CEO

-80

-100

-7

V_EBO

I_C

I_CM

I_B

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current

-10

-20

-7

I_E

Emitter Current

-14

Collector Power Dissipation

@ T_C=25℃

P_C

T_J

100

150

-65~150

℃

Junction Temperature

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance, Junction to Case

1.25

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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