BDW23B

更新时间： 2024-09-29 06:41:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管开关局域网
页数	文件大小	规格书
2页	121K
描述
isc Silicon NPN Darlington Power Transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BDW23B 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.56
Is Samacsys：	N	Base Number Matches：	1

BDW23B 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

BDW23/A/B/C

DESCRIPTION

·Collector Current -I_C= 6A

·High DC Current Gain-h_FE= 750(Min)@ I_C= 2A

·Complement to Type BDW24/A/B/C

APPLICATIONS

·Designed for hammer drivers, audio amplifiers applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BDW23

BDW23A

BDW23B

BDW23C

BDW23

Collector-Emitter

Voltage

V_CER

100

BDW23A

BDW23B

BDW23C

Collector-Emitter

Voltage

V_CEO

100

V_EBO

I_C

I_CM

I_B

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

0.2

Collector Power Dissipation

P_C

T_J

℃

@ T_C=25℃

Junction Temperature

150

-65~150

Storage Temperature Range

T_stg

isc Website：www.iscsemi.cn

中文翻译

下载PDF

与BDW23B相关器件

型号	品牌	获取价格	描述	数据表
BDW23BJ69Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BDW23BTU	FAIRCHILD	获取价格	Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BDW23C	BOURNS	获取价格	NPN SILICON POWER DARLINGTONS
BDW23C	FAIRCHILD	获取价格	Hammer Drivers, Audio Amplifiers Applications
BDW23C	POINN	获取价格	NPN SILICON POWER DARLINGTONS
BDW23C	ISC	获取价格	isc Silicon NPN Darlington Power Transistor
BDW23C	CENTRAL	获取价格	Transistor
BDW23CJ69Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BDW23C-S	BOURNS	获取价格	Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BDW23CTU	FAIRCHILD	获取价格	Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast