Datasheet > BD810_2015

BD810_2015

更新时间： 2024-02-17 23:04:12

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描述
Silicon PNP Transistors

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中文翻译

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数据手册

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BD810_2015 数据手册

Power Transistors

www.jmnic.com

BD810

Silicon PNP Transistors

ꢀFeatures

B C E

﹒Designed for use in high power audio amplifiers utilizing

complementary or quasi complementary circuits.

﹒With TO-220 package

ꢀAbsolute Maximum Ratings Tc=25

SYMBOL

V_CBO

V_CEO

V_EBO

I_B

PARAMETER

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Base collector current

Collector current

RATING

UNIT

5.0

6.0

I_C

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_j

150

-55~150

T_stg

TO-220

ꢀElectrical Characteristics Tc=25

SYMBOL

PARAMETER

Collector-base cut-off current

Emitter-base cut-off current

CONDITIONS

V_CB=80V; I_E=0

MIN

TYPE

MAX

1.0

UNIT

I_CBO

I_EBO

V_EB=5.0V; I_C=0

2.0

I_CEO

V_CBO

Collector-emitter cut-off current

Collector-base breakdown voltage

Collector-emitter breakdown voltage

V_(BR)ceo

I_C=0.1A; I_B=0

V_EBO

Emitter-base breakdown voltage

Collector-emitter saturation voltages

V_CE(sat-1)

V_CE(sat-2)

I_C=3A; I_B=0.3A

1.1

1.6

h_FE-1

h_FE-2

h_FE-3

V_BE(on)1

V_BE(on)2

f_T

Forward current transfer ratio

Base-emitter on voltages

Transition frepuency

I_C=2A; V_CE=2V

I_C=4A; V_CE=2V

V_CE=10V ;I_C=1A;f=1MHz

1.5

MHz

C_ob

Output Capacitance

中文翻译

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