Datasheet > BD244B

BD244B

更新时间： 2024-11-25 22:48:19

品牌	Logo	应用领域
POINN		晶体晶体管
页数	文件大小	规格书
6页	89K
描述
PNP SILICON POWER TRANSISTORS

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技术参数
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BD244B 技术参数

生命周期：	Transferred	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.69
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	6 A
集电极-发射极最大电压：	80 V	配置：	SINGLE
最小直流电流增益 (hFE)：	15	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	PNP	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

BD244B 数据手册

BD244, BD244A, BD244B, BD244C

PNP SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

●

Designed for Complementary Use with the

BD243 Series

TO-220 PACKAGE

(TOP VIEW)

●

65 W at 25°C Case Temperature

6 A Continuous Collector Current

10 A Peak Collector Current

Customer-Specified Selections Available

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BD244

-55

BD244A

BD244B

BD244C

BD244

-70

Collector-emitter voltage (R_BE= 100 W)

V_CER

-90

-115

-45

BD244A

BD244B

BD244C

-60

Collector-emitter voltage (I_C= -30 mA)

V_CEO

-80

-100

Emitter-base voltage

V_EBO

I_C

I_CM

I_B

-5

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

-6

-10

-3

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

P_tot

°C

½LI_C

62.5

Operating junction temperature range

T_j

T_stg

T_L

-65 to +150

250

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p£ 0.3 ms, duty cycle £ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.52 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= -0.4 A, R_BE= 100 W,

V_BE(off)= 0, R_S= 0.1 W, V_CC= -20 V.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6

中文翻译

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与BD244B相关器件

型号	品牌	获取价格	描述	数据表
BD244B16	MOTOROLA	获取价格	6 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD244B16A	MOTOROLA	获取价格	Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
BD244B-6200	RENESAS	获取价格	7A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD244B-6203	RENESAS	获取价格	7A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD244B-6226	RENESAS	获取价格	7A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD244B-6255	RENESAS	获取价格	Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
BD244B-6258	RENESAS	获取价格	7A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD244B-6261	RENESAS	获取价格	7A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB
BD244B-6263	RENESAS	获取价格	Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti
BD244B-6264	RENESAS	获取价格	7A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB

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