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BD244BBV PDF预览

BD244BBV

更新时间： 2024-11-26 13:05:55
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 92K
描述
6A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB, 3 PIN

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中文翻译

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BD244BBV 技术参数

是否Rohs认证：不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.77
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：6 A集电极-发射极最大电压：80 V
配置：SINGLE最小直流电流增益 (hFE)：15
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
认证状态：Not Qualified表面贴装：NO
端子面层：TIN LEAD端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：3 MHzBase Number Matches：1

BD244BBV 数据手册

 浏览型号BD244BBV的Datasheet PDF文件第2页浏览型号BD244BBV的Datasheet PDF文件第3页浏览型号BD244BBV的Datasheet PDF文件第4页浏览型号BD244BBV的Datasheet PDF文件第5页浏览型号BD244BBV的Datasheet PDF文件第6页 
Operating and Storage Junction  
Temperature Range  
T , T  
J
                                                                                                                       
65 to +150  
°C  
BD243B, BD243C* (NPN)  
BD244B, BD244C* (PNP)  
BD243C and BD244C are Preferred Devices  
Complementary Silicon  
Plastic Power Transistors  
These devices are designed for use in general purpose amplifier and  
switching applications.  
http://onsemi.com  
Features  
6 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY SILICON  
80-100 VOLTS  
•ꢀCollector - Emitter Saturation Voltage -  
CE(sat)  
V
= 1.5 Vdc (Max) @ I = 6.0 Adc  
C
•ꢀCollector Emitter Sustaining Voltage -  
CEO(sus)  
V
= 80 Vdc (Min) - BD243B, BD244B  
= 100 Vdc (Min) - BD243C, BD244C  
65 WATTS  
•ꢀHigh Current Gain Bandwidth Product  
f = 3.0 MHz (Min) @ I = 500 mAdc  
T
C
•ꢀPb-Free Packages are Available*  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
TO-220AB  
CASE 221A-09  
STYLE 1  
Collector-Emitter Voltage  
BD243B, BD244B  
BD243C, BD244C  
V
Vdc  
CEO  
80  
100  
1
2
3
Collector-Base Voltage  
BD243B, BD244B  
BD243C, BD244C  
V
Vdc  
CB  
80  
100  
Emitter-Base Voltage  
V
5.0  
Vdc  
Adc  
EB  
MARKING DIAGRAM  
Collector Current - Continuous  
- Peak  
I
6
10  
C
Base Current  
I
B
2.0  
Adc  
Total Device Dissipation @ T = 25°C  
P
D
65  
0.52  
W
W/°C  
C
Derate above 25°C  
BD24xyG  
AY WW  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max  
Unit  
BD24xy = Device Code  
x = 3 or 4  
y = B or C  
Thermal Resistance, Junction-to-Case  
R
1.92  
°C/W  
q
JC  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
A
=
=
=
=
Assembly Location  
Year  
Work Week  
Y
WW  
G
Pb-Free Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
*For additional information on our Pb-Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
November, 2007 - Rev. 12  
1
Publication Order Number:  
BD243B/D  
123456

中文翻译

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BD244B-DR6269 RENESAS

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BD244B-DR6280 RENESAS

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BD244BDW ONSEMI

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BD244BG ONSEMI

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 		Complementary Silicon Plastic Power Transistors
BD244BJ69Z FAIRCHILD

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 		Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plasti

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