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BD244B PDF预览

BD244B

更新时间: 2024-02-09 06:25:36
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
4页 37K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

BD244B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.67最大集电极电流 (IC):6 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):15JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:PNP
最大功率耗散 (Abs):65 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

BD244B 数据手册

 浏览型号BD244B的Datasheet PDF文件第2页浏览型号BD244B的Datasheet PDF文件第3页浏览型号BD244B的Datasheet PDF文件第4页 
BD243B/BD243C  
BD244B/BD244C  
COMPLEMENTARY SILICON POWER TRANSISTORS  
STMicroelectronics PREFERRED  
SALESTYPES  
DESCRIPTION  
The BD243B and BD243C are silicon  
Epitaxial-Base NPN transistors mounted in Jedec  
TO-220 plastic package.  
They are inteded for use in medium power linear  
and switching applications.  
3
2
The complementary PNP types are BD244B and  
BD244C respectively.  
1
TO-220  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
NPN  
PNP  
BD243B  
BD244B  
80  
BD243C  
BD244C  
100  
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
V
V
80  
100  
5
V
6
A
ICM  
IB  
Collector Peak Current  
10  
A
Base Current  
Total Dissipation at Tc 25 oC  
2
65  
A
Ptot  
Tstg  
Tj  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
For PNP types voltage and current values are negative.  
1/4  
September 1999  

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