Datasheet > BD239B

BD239B

更新时间： 2024-02-26 09:10:33

品牌	Logo	应用领域
POINN		晶体晶体管
页数	文件大小	规格书
6页	90K
描述
NPN SILICON POWER TRANSISTORS

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技术参数
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BD239B 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	TO-220AB
包装说明：	TO-220, 3 PIN	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.22	Is Samacsys：	N
最大集电极电流 (IC)：	2 A	集电极-发射极最大电压：	45 V
配置：	SINGLE	最小直流电流增益 (hFE)：	15
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	NOT APPLICABLE
极性/信道类型：	NPN	最大功率耗散 (Abs)：	30 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Matte Tin (Sn)
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT APPLICABLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	130 MHz
Base Number Matches：	1

BD239B 数据手册

BD239, BD239A, BD239B, BD239C

NPN SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

●

Designed for Complementary Use with the

BD240 Series

TO-220 PACKAGE

(TOP VIEW)

●

30 W at 25°C Case Temperature

2 A Continuous Collector Current

4 A Peak Collector Current

Customer-Specified Selections Available

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BD239

BD239A

BD239B

BD239C

BD239

Collector-emitter voltage (R_BE= 100 W)

V_CER

115

BD239A

BD239B

BD239C

Collector-emitter voltage (I_C= 30 mA)

V_CEO

100

Emitter-base voltage

V_EBO

I_C

I_CM

I_B

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

0.6

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

P_tot

°C

½LI_C

Operating junction temperature range

T_j

T_stg

T_L

-65 to +150

250

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p£ 0.3 ms, duty cycle £ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.24 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= 0.4 A, R_BE= 100 W,

V_BE(off)= 0, R_S= 0.1 W, V_CC= 20 V.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6

中文翻译

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与BD239B相关器件

型号	品牌	获取价格	描述	数据表
BD239B16	MOTOROLA	获取价格	Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BD239B16A	MOTOROLA	获取价格	Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
BD239B-6200	RENESAS	获取价格	4A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD239B-6203	RENESAS	获取价格	4A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD239B-6226	RENESAS	获取价格	4A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD239B-6255	RENESAS	获取价格	4A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD239B-6258	RENESAS	获取价格	4A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD239B-6261	RENESAS	获取价格	4A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD239B-6263	RENESAS	获取价格	4A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB
BD239B-6264	RENESAS	获取价格	4A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB

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