是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | IN-LINE, R-PSIP-T3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.11 |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.2 A |
集电极-发射极最大电压: | 32 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 120 | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 200 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 参考标准: | CECC |
表面贴装: | NO | 端子面层: | MATTE TIN |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 125 MHz |
最大关闭时间(toff): | 800 ns | 最大开启时间(吨): | 150 ns |
VCEsat-Max: | 0.35 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCY58VII | NXP |
获取价格 |
NPN switching transistors | |
BCY58-VII | NJSEMI |
获取价格 |
Trans GP BJT NPN 32V 0.2A 3-Pin TO-18 | |
BCY58-VII | CENTRAL |
获取价格 |
32V,100mA,340mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise | |
BCY58VIII | NXP |
获取价格 |
NPN switching transistors | |
BCY58-VIII | MOTOROLA |
获取价格 |
200mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA | |
BCY58-VIII | NJSEMI |
获取价格 |
Trans GP BJT NPN 32V 0.2A 3-Pin TO-18 | |
BCY58-VIII | CENTRAL |
获取价格 |
32V,100mA,340mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise | |
BCY58-VIIILEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, | |
BCY58VIILEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, | |
BCY58-VIILEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, |