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BCY58-VIILEADFREE PDF预览

BCY58-VIILEADFREE

更新时间: 2024-02-10 19:44:37
品牌 Logo 应用领域
CENTRAL 开关晶体管
页数 文件大小 规格书
3页 609K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN

BCY58-VIILEADFREE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:CYLINDRICAL, O-MBCY-W3Reach Compliance Code:compliant
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:32 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-18JESD-30 代码:O-MBCY-W3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN (315)
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
最大关闭时间(toff):800 ns最大开启时间(吨):150 ns
Base Number Matches:1

BCY58-VIILEADFREE 数据手册

 浏览型号BCY58-VIILEADFREE的Datasheet PDF文件第2页浏览型号BCY58-VIILEADFREE的Datasheet PDF文件第3页 
BCY58, VII, VIII, IX, X  
BCY59, VII, VIII, IX, X  
www.centralsemi.com  
SILICON  
NPN TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR BCY58 and BCY59  
series types are silicon NPN epitaxial planar transistors,  
mounted in a hermetically sealed metal case, designed  
for low noise amplifier and switching applications.  
MARKING: FULL PART NUMBER  
TO-18 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted) SYMBOL  
BCY58  
32  
32  
BCY59  
45  
45  
UNITS  
V
V
V
mA  
mA  
mA  
mW  
W
°C  
°C/W  
°C/W  
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Collector Current  
Peak Base Current  
V
V
V
CBO  
CEO  
EBO  
C
CM  
7.0  
100  
200  
200  
340  
1.0  
I
I
I
BM  
Power Dissipation  
P
P
D
D
Power Dissipation (T =25°C)  
C
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +200  
450  
J
stg  
JA  
JC  
Thermal Resistance  
150  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
V
V
V
=Rated V  
=Rated V  
=5.0V  
10  
10  
10  
nA  
CBO  
CBO  
EBO  
CBO  
CBO  
CEO  
CEO  
EBO  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
CB  
CB  
EB  
CBO  
CBO  
, T =150°C  
μA  
nA  
V
V
V
V
V
V
V
A
BV  
BV  
BV  
BV  
BV  
V
V
V
V
I =10μA (BCY58)  
32  
45  
32  
45  
7.0  
C
I =10μA (BCY59)  
C
I =2.0mA (BCY58)  
C
I =2.0mA (BCY59)  
C
I =1.0μA  
E
I =10mA, I =250ꢀA  
0.35  
0.70  
0.85  
1.20  
C
B
B
B
B
I =100mA, I =2.5mA  
C
I =10mA, I =250ꢀA  
0.60  
0.75  
V
V
C
I =100mA, I =2.5mA  
C
BCY58-VII  
BCY59-VII  
MIN TYP MAX  
BCY58-VIII  
BCY59-VIII  
MIN MAX  
BCY58-IX  
BCY59-IX  
MIN MAX  
BCY58-X  
BCY59-X  
MIN MAX  
h
h
h
h
V
=5.0V, I =10μA  
-
20  
-
-
-
20  
180 310  
120 400  
-
40  
-
100  
380 630  
240 1000  
-
FE  
FE  
FE  
FE  
CE  
CE  
CE  
CE  
C
V
V
V
=5.0V, I =2.0mA  
120  
80  
40  
220  
-
-
250 460  
160 630  
60  
C
=1.0V, I =10mA  
C
=1.0V, I =100mA  
-
45  
-
-
60  
-
C
R2 (8-November 2013)  

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