5秒后页面跳转
BCX54-10 PDF预览

BCX54-10

更新时间: 2024-01-29 23:17:59
品牌 Logo 应用领域
TYSEMI /
页数 文件大小 规格书
2页 107K
描述
High current (max. 1 A). Low voltage (max. 80 V).Collector current IC 1 A

BCX54-10 技术参数

生命周期:Active包装说明:PLASTIC PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.58外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):63
JESD-30 代码:R-PSSO-F3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):1.2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:TIN LEAD
端子形式:FLAT端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):130 MHzBase Number Matches:1

BCX54-10 数据手册

 浏览型号BCX54-10的Datasheet PDF文件第2页 
Transistors  
Product specification  
BCX54,BCX55,BCX56  
Features  
High current (max. 1 A).  
Low voltage (max. 80 V).  
Absolute Maximum Ratings Ta = 25  
Parameter  
Symbol  
VCBO  
Rating  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
BCX54  
45  
BCX55  
BCX56  
BCX54  
BCX55  
BCX56  
60  
V
100  
V
VCEO  
45  
V
60  
V
80  
V
Emitter-base voltage  
Collector current  
VEBO  
IC  
5
V
1
A
Peak collector current  
Peak base current  
ICM  
1.5  
0.2  
A
IBM  
A
Total power dissipation  
Storage temperature  
Junction temperature  
Operating ambient temperature  
Ptot  
1.3  
W
Tstg  
Tj  
-65 to +150  
150  
Ramb  
Rth(j-a)  
Rth(j-s)  
-65 to +150  
94  
Thermal resistance from junction to ambient  
Thermal resistance from junction to solder point  
K/W  
K/W  
14  
4008-318-123  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  

与BCX54-10相关器件

型号 品牌 获取价格 描述 数据表
BCX54-10,115 ETC

获取价格

TRANS NPN 45V 1A SOT89
BCX54-10-BC ZETEX

获取价格

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
BCX54-10BK CENTRAL

获取价格

Transistor
BCX54-10E6327 INFINEON

获取价格

Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
BCX54-10E6433 INFINEON

获取价格

Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
BCX54-10LEADFREE CENTRAL

获取价格

Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
BCX54-10-Q NEXPERIA

获取价格

45 V, 1 A NPN medium power transistorsProduction
BCX54-10T NEXPERIA

获取价格

45 V, 1 A NPN power bipolar transistorsProduction
BCX54-10T/R ETC

获取价格

TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SOT-89
BCX5410TA DIODES

获取价格

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89