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BCW60C

更新时间： 2024-01-23 06:58:15
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管开关光电二极管
页数 文件大小 规格书
3页 34K
描述
Small Signal Transistors (PNP)

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BCW60C 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：ActiveReach Compliance Code：not_compliant
HTS代码：8541.21.00.95风险等级：5.13
其他特性：LOW NOISE基于收集器的最大容量：2.5 pF
集电极-发射极最大电压：32 V配置：SINGLE
最小直流电流增益 (hFE)：130JESD-30 代码：R-PDSO-G3
JESD-609代码：e0元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子面层：TIN LEAD端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管元件材料：SILICON标称过渡频率 (fT)：250 MHz
VCEsat-Max：0.55 VBase Number Matches：1

BCW60C 数据手册

 浏览型号BCW60C的Datasheet PDF文件第1页浏览型号BCW60C的Datasheet PDF文件第3页 
BCW61 Series  
Vishay Semiconductors  
formerly General Semiconductor  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Symbol  
Min.  
TYP.  
Max.  
Unit  
DC Current Gain  
at –VCE = 5 V, –IC = 10 µA  
at –VCE = 5 V, –IC = 10 µA  
at –VCE = 5 V, –IC = 10 µA  
at –VCE = 5 V, –IC = 10 µA  
BCW61A  
BCW61B  
BCW61C  
BCW61D  
hFE  
hFE  
hFE  
hFE  
–
30  
40  
100  
–
–
–
–
–
–
–
–
–
–
–
–
at –VCE = 5 V, –IC = 2 mA  
at –VCE = 5 V, –IC = 2 mA  
at –VCE = 5 V, –IC = 2 mA  
at –VCE = 5 V, –IC = 2 mA  
BCW61A  
BCW61B  
BCW61C  
BCW61D  
hFE  
hFE  
hFE  
hFE  
120  
180  
250  
380  
–
–
–
–
220  
310  
460  
630  
–
–
–
–
at –VCE = 1 V, –IC = 50 mA  
at –VCE = 1 V, –IC = 50 mA  
at –VCE = 1 V, –IC = 50 mA  
at –VCE = 1 V, –IC = 50 mA  
BCW61A  
BCW61B  
BCW61C  
BCW61D  
hFE  
hFE  
hFE  
hFE  
60  
80  
100  
110  
–
–
–
–
–
–
–
–
–
–
–
–
Collector-Emitter Saturation Voltage  
at –IC = 10 mA, –IB = 0.25 mA  
at –IC = 50 mA, –IB = 1.25 mA  
–VCEsat  
–VCEsat  
60  
120  
–
–
250  
550  
mV  
mV  
Base-Emitter Saturation Voltage  
at –IC = 10 mA, –IB = 0.25 mA  
at –IC = 50 mA, –IB = 1.25 mA  
–VBEsat  
–VBEsat  
600  
680  
–
–
850  
1050  
mV  
mV  
Base-Emitter Voltage  
at –VCE = 5 V, –IC = 2 mA  
at –VCE = 5 V, –IC = 10 µA  
at –VCE = 1 V, –IC = 50 mA  
–VBE  
–VBE  
–VBE  
600  
–
–
650  
550  
720  
750  
–
–
mV  
mV  
mV  
Collector-Emiter Cut-off Current  
at –VCE = 32 V, VEB=0  
at –VCE = 32 V, VEB=0, TA = 150°C  
–ICES  
–
–
–
–
20  
20  
nA  
µA  
Emitter-Base Cut-off Current  
at –VEB = 4 V, IC=0  
–IEBO  
fT  
–
100  
–
–
–
20  
–
nA  
MHz  
pF  
Gain-Bandwidth Product  
at –VCE = 5 V, –IC = 10 mA, f = 100 MHz  
Collector-Base Capacitance  
at –VCB = 10 V, f = 1 MHZ, IE=0  
CCBO  
CEBO  
F
4.5  
11  
2
–
Emitter-Base Capacitance  
at –VEB = 0.5 V, f = 1 MHZ, IC=0  
–
–
pF  
Noise Figure  
–
6
dB  
at –V = 5 V, –I = 200 µA, R = 2 kΩ, f = 100 kH , B = 200Hz  
CE  
C
S
Z
Small Signal Current Gain  
at –VCE = 5V, –IC = 2 mA, f = 1.0 kHZ  
BCW60A  
BCW60B  
BCW60C  
BCW60D  
–
–
–
–
200  
260  
330  
520  
hfe  
Turn-on Time at RL = 990Ω (see fig. 1)  
– VCC = 10V, –Ic = 10mA, –IB(on) = IB(off) = 1mA  
ton  
toff  
–
–
85  
150  
800  
ns  
ns  
Turn-off Time at RL = 990Ω (see fig. 1)  
– VCC = 10V, –Ic = 10mA, –IB(on) = IB(off) = 1mA  
480  
www.vishay.com  
2
Document Number 88171  
09-May-02  
123

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