Datasheet > BCW31D87Z

BCW31D87Z

更新时间： 2024-09-26 03:37:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		放大器光电二极管晶体管
页数	文件大小	规格书
4页	107K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon

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技术参数
数据手册

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BCW31D87Z 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.75	风险等级：	5.62
最大集电极电流 (IC)：	0.5 A	集电极-发射极最大电压：	32 V
配置：	SINGLE	最小直流电流增益 (hFE)：	110
JESD-30 代码：	R-PDSO-G3	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	200 MHz	Base Number Matches：	1

BCW31D87Z 数据手册

BCW31

NPN General Purpose Amplifier

This device is designed for general purpose amplifier applications

at collector currents to 300 mAꢀ

SOT-23

Mark: D1

Absolute Maximum Ratings*

Ta = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

5.0

Collector Current (DC)

500

°C

Operating and Storage Junction Temperature Range

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impairedꢀ

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degreesꢀ

2) These are steady state limitsꢀ The factory should be consulted on applications involving pulsed or low duty cycle operationsꢀ

Thermal Characteristics

Ta = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

*BCW31

P_c

Collector Power Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient

350

2.8

357

mW/°C

°C/W

R_θJA

*Device mounted on FR-4 PCB 40 mm X 40 mm X 1ꢀ5 mmꢀ

ã 2001 Fairchild Semiconductor Corporation

BCW31/BCW32/BCW33, Rev B

12 3 4

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