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BCR3KM-12 PDF预览

BCR3KM-12

更新时间: 2024-02-28 08:16:29
品牌 Logo 应用领域
瑞萨 - RENESAS 栅极触发装置可控硅三端双向交流开关局域网
页数 文件大小 规格书
7页 117K
描述
Triac Low Power Use

BCR3KM-12 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.84外壳连接:ISOLATED
配置:SINGLE最大直流栅极触发电流:15 mA
最大直流栅极触发电压:1.5 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3最大漏电流:2 mA
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT认证状态:Not Qualified
最大均方根通态电流:3 A断态重复峰值电压:600 V
子类别:TRIACs表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
触发设备类型:TRIAC

BCR3KM-12 数据手册

 浏览型号BCR3KM-12的Datasheet PDF文件第1页浏览型号BCR3KM-12的Datasheet PDF文件第3页浏览型号BCR3KM-12的Datasheet PDF文件第4页浏览型号BCR3KM-12的Datasheet PDF文件第5页浏览型号BCR3KM-12的Datasheet PDF文件第6页浏览型号BCR3KM-12的Datasheet PDF文件第7页 
BCR3KM-12  
Parameter  
Symbol  
Ratings  
Unit  
Conditions  
RMS on-state current  
Surge on-state current  
I2t for fusing  
IT(RMS)  
3.0  
A
Commercial frequency, sine full wave  
360° conduction, Tc = 111°C  
ITSM  
I2t  
30  
A
60Hz sinewave 1 full cycle, peak value,  
non-repetitive  
3.7  
A2s  
Value corresponding to 1 cycle of half  
wave 60Hz, surge on-state current  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
PGM  
PG(AV)  
VGM  
IGM  
3
W
W
V
0.3  
6
0.5  
Peak gate current  
A
Junction temperature  
Storage temperature  
Mass  
Tj  
– 40 to +125  
– 40 to +125  
2.0  
°C  
°C  
g
Tstg  
Isolation voltage  
Viso  
2000  
V
Ta = 25°C, AC 1 minute,  
T1·T2·G terminal to case  
Notes: 1. Gate open.  
Electrical Characteristics  
Parameter  
Repetitive peak off-state current  
On-state voltage  
Symbol  
IDRM  
Min.  
Typ.  
Max.  
2.0  
Unit  
mA  
V
Test conditions  
Tj = 125°C, VDRM applied  
VTM  
1.5  
Tc = 25°C, ITM = 4.5 A,  
Instantaneous measurement  
Gate trigger voltageNote2  
I
II  
III  
I
VFGT  
0.2  
1.5  
1.5  
V
V
Tj = 25°C, VD = 6 V, RL = 6 ,  
RG = 330 Ω  
I
VRGT  
I
VRGT  
1.5  
V
III  
Gate trigger currentNote2  
IFGT  
15Note3  
15Note3  
15Note3  
mA  
mA  
mA  
V
Tj = 25°C, VD = 6 V, RL = 6 ,  
RG = 330 Ω  
I
II  
III  
IRGT  
I
IRGT  
III  
Gate non-trigger voltage  
Thermal resistance  
Thermal resistance  
VGD  
Tj = 125°C, VD = 1/2VDRM  
Junction to caseNote4  
Junction to ambient  
Rth(j-c)  
Rth(j-a)  
4.0  
°C/W  
°C/W  
50  
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.  
3. High sensitivity (IGT 10 mA) is also available. (IGT item: 1)  
4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.  
Rev.2.00, Nov.09.2004, page 2 of 6  

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