Datasheet > BCR3FM-14LB

BCR3FM-14LB

更新时间： 2022-05-28 07:40:08

品牌	Logo	应用领域
瑞萨 - RENESAS		可控硅
页数	文件大小	规格书
4页	62K
描述
700V - 3A - Triac Medium Power Use

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数据手册

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BCR3FM-14LB 数据手册

BCR3FM-14LB

Preliminary

Parameter

Symbol

Ratings

Unit

Conditions

RMS on-state current

Surge on-state current

I²t for fusion

I_{T (RMS)}

Commercial frequency, sine full wave

360 conduction, Tc = 133C

I_TSM

I²t

60 Hz sinewave 1 full cycle,

peak value, non-repetitive

3.7

A²s

Value corresponding to 1 cycle of half

wave 60 Hz, surge on-state current

Peak gate power dissipation

Average gate power dissipation

Peak gate voltage

P_GM

P_{G (AV)}

V_GM

I_GM

0.3

Peak gate current

0.5

Junction Temperature

Storage temperature

Mass

–40 to +150

1.9

C

Tstg

—

Typical value

Isolation voltage ^Note5

Viso

2000

Ta = 25C, AC 1 minute

T₁ T₂ G terminal to case

Electrical Characteristics

Parameter

Repetitive peak off-state current

On-state voltage

Symbol

Min.

—

Typ.

—

Max.

Unit

Test conditions

I_DRM

V_TM

2.0

1.6

Tj = 150C, V_DRMapplied

—

Tc = 25C, I_TM= 4.5A,

instantaneous measurement

Gate trigger voltage^Note2









V_FGT

—

1.5

Tj = 25C, V_D= 6 V, R_L= 6 ,

R_G= 330 



V_RGT







Gate trigger curent^Note2

I_FGT

I_RGT

Tj = 25C, V_D= 6 V, R_L= 6 ,

R_G= 330 







I_RGT



Gate non-trigger voltage

V_GD

0.2

0.1

—

Tj = 125C, V_D= 1/2 V_DRM

Tj = 150C, V_D= 1/2 V_DRM

Junction to case^Note3

Tj = 125C

Thermal resistance

R_{th (j-c)}

4.0

—

C/W

V/s

Critical-rate of rise of off-state

commutation voltage^Note4

Notes: 1. Gate open.

(dv/dt)c

—

Tj = 150C

2. Measurement using the gate trigger characteristics measurement circuit.

3. The contact thermal resistance R_{th (c-f)}in case of greasing is 0.5C /W.

4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.

5. Make sure that your finished product containing this device meets your safe isolation requirements.

For safety, it's advisable that heatsink is electrically floating.

Commutating voltage and current waveforms

Test conditions

(inductive load)

1. Junction temperature

Time

Supply Voltage

Tj = 125/150C

2. Rate of decay of on-state commutating current

(di/dt)c = –1.5A/ms

(di/dt)c

Time

Main Current

Main Voltage

3. Peak off-state voltage

V_D= 400 V

(dv/dt)c

R07DS0963EJ0001 Rev.0.01

Nov 28, 2012

Page 2 of 3

123 4

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