Datasheet > BCR3FM-12RB-A8BB0

BCR3FM-12RB-A8BB0

更新时间： 2022-04-20 21:56:33

品牌	Logo	应用领域
瑞萨 - RENESAS		可控硅
页数	文件大小	规格书
4页	59K
描述
600V - 3A - Triac Medium Power Use

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BCR3FM-12RB-A8BB0 数据手册

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BCR3FM-12RB

Preliminary

Electrical Characteristics

Parameter

Repetitive peak off-state current

On-state voltage

Symbol

I_DRM

Min.

—

Typ.

—

Max.

2.0

Unit

Test conditions

Tj = 150C, V_DRMapplied

V_TM

—

1.5

Tc = 25C, I_TM= 4.5 A,

instantaneous measurement

Gate trigger voltage^Note2









V_FGT

—

1.5

Tj = 25C, V_D= 6 V, R_L= 6 ,

R_G= 330 



V_RGT



V_RGT

1.5



Gate trigger curent^Note2

I_FGT

15 ^Note4

Tj = 25C, V_D= 6 V, R_L= 6 ,

R_G= 330 







I_RGT



I_RGT



Gate non-trigger voltage

V_GD

0.2

0.1

—

Tj = 125C, V_D= 1/2 V_DRM

Tj = 150C, V_D= 1/2 V_DRM

Junction to case^Note3

Thermal resistance

R_{th (j-c)}

4.0

C/W

Notes: 1. Gate open.

2. Measurement using the gate trigger characteristics measurement circuit.

3. The contact thermal resistance R_{th (c-f)}in case of greasing is 0.5C/W.

4. High sensitivity (IGT  10 mA) is also available (I_GTitem: 1).

5. Make sure that your finished product containing this device meets your safe isolation requirements.

For safety, it's advisable that heatsink is electrically floating.

R07DS0962EJ0001 Rev.0.01

Nov 28, 2012

Page 2 of 3

123 4

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