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BCR3FM-12RB-1#BB0 PDF预览

BCR3FM-12RB-1#BB0

更新时间: 2024-02-18 22:31:02
品牌 Logo 应用领域
瑞萨 - RENESAS 三端双向交流开关栅极
页数 文件大小 规格书
4页 123K
描述
TRIAC,600V V(DRM),3A I(T)RMS,TO-220AB(FP)

BCR3FM-12RB-1#BB0 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.78
最大直流栅极触发电流:15 mA最大直流栅极触发电压:1.5 V
最高工作温度:150 °C最低工作温度:-40 °C
最大均方根通态电流:3 A断态重复峰值电压:600 V
子类别:TRIACs表面贴装:NO
触发设备类型:TRIACBase Number Matches:1

BCR3FM-12RB-1#BB0 数据手册

 浏览型号BCR3FM-12RB-1#BB0的Datasheet PDF文件第1页浏览型号BCR3FM-12RB-1#BB0的Datasheet PDF文件第3页浏览型号BCR3FM-12RB-1#BB0的Datasheet PDF文件第4页 
BCR3FM-12RB  
Preliminary  
Parameter  
Symbol  
Ratings  
Unit  
Conditions  
RMS on-state current  
IT (RMS)  
3
A
Commercial frequency, sine full wave 360°  
conduction,  
Tc = 136°C (#BB0, See Ordering Info.)  
130°C (#FA0, See Ordering Info.)  
60 Hz sinewave 1 full cycle,  
peak value, non-repetitive  
Surge on-state current  
I2t for fusion  
ITSM  
I2t  
30  
A
3.7  
A2s  
Value corresponding to 1 cycle of half wave  
60Hz, surge on-state current  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
PGM  
PG (AV)  
VGM  
IGM  
3
W
W
V
0.3  
6
Peak gate current  
0.5  
A
Junction Temperature  
Storage temperature  
Mass  
Tj  
–40 to +150  
–40 to +150  
1.9  
°C  
°C  
g
Tstg  
Typical value  
Isolation voltage Note5  
Viso  
2000  
V
Ta = 25°C, AC 1 minute  
T1 T2 G terminal to case  
Electrical Characteristics  
Parameter  
Repetitive peak off-state current  
On-state voltage  
Symbol  
IDRM  
Min.  
Typ.  
Max.  
Unit  
mA  
V
Test conditions  
2.0  
1.5  
Tj = 150°C, VDRM applied  
Tc = 25°C, ITM = 4.5 A,  
VTM  
instantaneous measurement  
Gate trigger voltageNote2  
Ι
ΙΙ  
ΙΙΙ  
Ι
ΙΙ  
ΙΙΙ  
VFGT  
1.5  
1.5  
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,  
RG = 330 Ω  
Ι
VRGT  
Ι
VRGT  
1.5  
V
ΙΙΙ  
Gate trigger curentNote2  
IFGT  
15 Note4  
15 Note4  
15 Note4  
mA  
mA  
mA  
Tj = 25°C, VD = 6 V, RL = 6 Ω,  
RG = 330 Ω  
Ι
IRGT  
Ι
IRGT  
ΙΙΙ  
Gate non-trigger voltage  
Thermal resistance  
VGD  
0.2  
0.1  
V
V
Tj = 125°C, VD = 1/2 VDRM  
Tj = 150°C, VD = 1/2 VDRM  
Junction to caseNote3  
Rth (j-c)  
4.0  
°C/W  
#BB0 (See Ordering Info.)  
5.2  
°C/W  
Junction to caseNote3  
#FA0 (See Ordering Info.)  
Notes: 1. Gate open.  
2. Measurement using the gate trigger characteristics measurement circuit.  
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.  
4. High sensitivity (IGT 10 mA) is also available (IGT item: 1).  
5. Make sure that your finished product containing this device meets your safe isolation requirements.  
For safety, it's advisable that heatsink is electrically floating.  
R07DS0962EJ0100 Rev.1.00  
Aug 29, 2014  
Page 2 of 3  

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