BCR3FM-12RB
Preliminary
Parameter
Symbol
Ratings
Unit
Conditions
RMS on-state current
IT (RMS)
3
A
Commercial frequency, sine full wave 360°
conduction,
Tc = 136°C (#BB0, See Ordering Info.)
130°C (#FA0, See Ordering Info.)
60 Hz sinewave 1 full cycle,
peak value, non-repetitive
Surge on-state current
I2t for fusion
ITSM
I2t
30
A
3.7
A2s
Value corresponding to 1 cycle of half wave
60Hz, surge on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
PGM
PG (AV)
VGM
IGM
3
W
W
V
0.3
6
Peak gate current
0.5
A
Junction Temperature
Storage temperature
Mass
Tj
–40 to +150
–40 to +150
1.9
°C
°C
g
Tstg
—
Typical value
Isolation voltage Note5
Viso
2000
V
Ta = 25°C, AC 1 minute
T1 • T2 • G terminal to case
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
Min.
—
Typ.
Max.
Unit
mA
V
Test conditions
—
—
2.0
1.5
Tj = 150°C, VDRM applied
Tc = 25°C, ITM = 4.5 A,
VTM
—
instantaneous measurement
Gate trigger voltageNote2
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
VFGT
—
—
—
—
—
—
—
—
—
—
—
—
1.5
1.5
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Ι
VRGT
Ι
VRGT
1.5
V
ΙΙΙ
Gate trigger curentNote2
IFGT
15 Note4
15 Note4
15 Note4
mA
mA
mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Ι
IRGT
Ι
IRGT
ΙΙΙ
Gate non-trigger voltage
Thermal resistance
VGD
0.2
0.1
—
—
—
—
—
—
V
V
Tj = 125°C, VD = 1/2 VDRM
Tj = 150°C, VD = 1/2 VDRM
Junction to caseNote3
Rth (j-c)
4.0
°C/W
#BB0 (See Ordering Info.)
—
—
5.2
°C/W
Junction to caseNote3
#FA0 (See Ordering Info.)
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. High sensitivity (IGT ≤ 10 mA) is also available (IGT item: 1).
5. Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
R07DS0962EJ0100 Rev.1.00
Aug 29, 2014
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