Datasheet > BCR3FM-12LB-A8BB0

BCR3FM-12LB-A8BB0

更新时间： 2022-05-28 07:40:05

品牌	Logo	应用领域
瑞萨 - RENESAS		可控硅
页数	文件大小	规格书
4页	63K
描述
600V - 3A - Triac Medium Power Use

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BCR3FM-12LB-A8BB0 数据手册

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BCR3FM-12LB

Preliminary

Electrical Characteristics

Parameter

Repetitive peak off-state current

On-state voltage

Symbol

I_DRM

Min.

—

Typ.

—

Max.

2.0

Unit

Test conditions

Tj = 150C, V_DRMapplied

V_TM

—

1.5

Tc = 25C, I_TM= 4.5 A,

instantaneous measurement

Gate trigger voltage^Note2









V_FGT

—

1.5

Tj = 25C, V_D= 6 V, R_L= 6 ,

R_G= 330 



V_RGT



V_RGT

1.5



Gate trigger curent^Note2

I_FGT

20 ^Note5

Tj = 25C, V_D= 6 V, R_L= 6 ,

R_G= 330 







I_RGT



I_RGT



Gate non-trigger voltage

Thermal resistance

V_GD

0.2

0.1

—

Tj = 125C, V_D= 1/2 V_DRM

Tj = 150C, V_D= 1/2 V_DRM

Junction to case^Note3

Tj = 125C

R_{th (j-c)}

4.0

—

C/W

V/s

Critical-rate of rise of off-state

commutation voltage^Note4

(dv/dt)c

—

Tj = 150C

Notes: 1. Gate open.

2. Measurement using the gate trigger characteristics measurement circuit.

3. The contact thermal resistance R_{th (c-f)}in case of greasing is 0.5C/W.

4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.

5. High sensitivity (I_GT 10 mA) is also available (I_GTitem: 1).

6. Make sure that your finished product containing this device meets your safe isolation requirements.

For safety, it's advisable that heatsink is electrically floating.

Commutating voltage and current waveforms

Test conditions

(inductive load)

1. Junction temperature

Time

Supply Voltage

Tj = 125/150C

2. Rate of decay of on-state commutating current

(di/dt)c = –1.5A/ms

(di/dt)c

Time

Main Current

Main Voltage

3. Peak off-state voltage

V_D= 400 V

(dv/dt)c

R07DS0955EJ0001 Rev.0.01

Nov 19, 2012

Page 2 of 3

123 4

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