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BCR2PM-14LEB00 PDF预览

BCR2PM-14LEB00

更新时间: 2022-10-15 10:12:21
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瑞萨 - RENESAS 可控硅
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7页 82K
描述
Triac Medium Power Use

BCR2PM-14LEB00 数据手册

 浏览型号BCR2PM-14LEB00的Datasheet PDF文件第1页浏览型号BCR2PM-14LEB00的Datasheet PDF文件第3页浏览型号BCR2PM-14LEB00的Datasheet PDF文件第4页浏览型号BCR2PM-14LEB00的Datasheet PDF文件第5页浏览型号BCR2PM-14LEB00的Datasheet PDF文件第6页浏览型号BCR2PM-14LEB00的Datasheet PDF文件第7页 
BCR2PM-14LE  
Preliminary  
Parameter  
Symbol  
Ratings  
Unit  
Conditions  
RMS on-state current  
Surge on-state current  
I2t for fusing  
IT (RMS)  
2
A
Commercial frequency, sine full wave  
360° conduction  
ITSM  
I2t  
10  
A
60 Hz sinewave 1 full cycle, peak value,  
non-repetitive  
0.41  
A2s  
Value corresponding to 1 cycle of half  
wave 60 Hz, surge on-state current  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
PGM  
PG (AV)  
VGM  
IGM  
1
W
W
V
0.1  
6
1
Peak gate current  
A
Junction temperature  
Storage temperature  
Mass  
Tj  
– 40 to +150  
– 40 to +150  
2.0  
C  
C  
g
Tstg  
Typical value  
Notes: 1. Gate open.  
Electrical Characteristics  
Parameter  
Repetitive peak off-state current  
On-state voltage  
Symbol  
IDRM  
Min.  
Typ.  
Max.  
Unit  
Test conditions  
1.0  
2.1  
mA  
V
Tj = 150C, VDRM applied  
VTM  
Tj = 25C, ITM = 3 A,  
Instantaneous measurement  
Gate trigger voltage Note2  
  
  
VFGT  
2.0  
2.0  
2.0  
10  
V
V
Tj = 25C, VD = 6 V, RL = 6 ,  
RG = 330   
VRGT  
VRGT  
V
  
Gate trigger current Note2  
IFGT  
mA  
mA  
mA  
Tj = 25C, VD = 6 V, RL = 6 ,  
RG = 330   
  
  
IRGT  
10  
IRGT  
10  
  
Gate non-trigger voltage  
Thermal resistance  
VGD  
0.1  
V
Tj = 150C, VD = 1/2 VDRM  
Rth (j-a)  
45  
C/W Junction to ambient,  
Natural convection  
Critical-rate of rise of off-state  
commutation voltage Note3  
(dv/dt)c  
0.5  
V/s  
Tj = 125C  
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.  
3. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.  
Test conditions  
Commutating voltage and current waveforms  
(inductive load)  
1. Junction temperature  
Time  
Supply Voltage  
Tj = 125C  
(di/dt)c  
2. Rate of decay of on-state commutating current  
(di/dt)c = –1.0 A/ms  
Time  
Main Current  
Main Voltage  
Time  
3. Peak off-state voltage  
VD = 400 V  
(dv/dt)c  
V
D
R07DS0233EJ0100 Rev.1.00  
Jan 05, 2011  
Page 2 of 6  

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