BCR2PM-14LE
Preliminary
Parameter
Symbol
Ratings
Unit
Conditions
RMS on-state current
Surge on-state current
I2t for fusing
IT (RMS)
2
A
Commercial frequency, sine full wave
360° conduction
ITSM
I2t
10
A
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
0.41
A2s
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
PGM
PG (AV)
VGM
IGM
1
W
W
V
0.1
6
1
Peak gate current
A
Junction temperature
Storage temperature
Mass
Tj
– 40 to +150
– 40 to +150
2.0
C
C
g
Tstg
—
Typical value
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
Min.
—
Typ.
—
Max.
Unit
Test conditions
1.0
2.1
mA
V
Tj = 150C, VDRM applied
VTM
—
—
Tj = 25C, ITM = 3 A,
Instantaneous measurement
Gate trigger voltage Note2
VFGT
—
—
—
—
—
—
—
—
—
—
—
—
2.0
2.0
2.0
10
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
VRGT
VRGT
V
Gate trigger current Note2
IFGT
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
IRGT
10
IRGT
10
Gate non-trigger voltage
Thermal resistance
VGD
0.1
—
—
—
—
V
Tj = 150C, VD = 1/2 VDRM
Rth (j-a)
45
C/W Junction to ambient,
Natural convection
Critical-rate of rise of off-state
commutation voltage Note3
(dv/dt)c
0.5
—
—
V/s
Tj = 125C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Time
Supply Voltage
Tj = 125C
(di/dt)c
2. Rate of decay of on-state commutating current
(di/dt)c = –1.0 A/ms
Time
Main Current
Main Voltage
Time
3. Peak off-state voltage
VD = 400 V
(dv/dt)c
V
D
R07DS0233EJ0100 Rev.1.00
Jan 05, 2011
Page 2 of 6