BCR30

更新时间： 2024-11-27 22:39:31

品牌	Logo	应用领域
三菱 - MITSUBISHI		局域网
页数	文件大小	规格书
5页	90K
描述
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

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中文翻译

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数据手册

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BCR30 数据手册

MITSUBISHI SEMICONDUCTOR TRIAC

BCR30AM

MEDIUM POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

Dimensions

BCR30AM

OUTLINE DRAWING

in mm

4.5±0.3

1.5±0.2

15.9 MAX

TYPE

NAME

VOLTAGE

CLASS

2±0.3

1.0±0.2

0.6±0.2

2.8±0.3

5.45 5.45

Measurement point of

case temperature

2 4

TERMINAL

• IT (RMS) ...................................................................... 30A

• VDRM ..............................................................400V/600V

• IFGT !, IRGT !, IRGT # ...........................................50mA

GATE TERMINAL

TERMINAL

TO-3P

APPLICATION

Contactless AC switches, light dimmer,

on/off and speed control of small induction motors, on/off control of copier lamps,

microwave ovens

MAXIMUM RATINGS

Voltage class

Symbol

Parameter

Unit

✽1

VDRM

VDSM

Repetitive peak off-state voltage

400

500

600

720

✽1

Non-repetitive peak off-state voltage

Symbol

Parameter

RMS on-state current

Surge on-state current

Conditions

Ratings

Unit

IT (RMS)

ITSM

Commercial frequency, sine full wave 360° conduction, Tc=75°C

60Hz sinewave 1 full cycle, peak value, non-repetitive

300

Value corresponding to 1 cycle of half wave 60Hz, surge on-state

current

I t

I t for fusing

378

A s

PGM

PG (AV)

VGM

IGM

Peak gate power dissipation

Average gate power dissipation

Peak gate voltage

0.5

Peak gate current

Junction temperature

Storage temperature

Weight

–40 ~ +125

4.8

°C

Tstg

—

Typical value

✽1. Gate open.

Feb.1999

12 3 4 5

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