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BCR20PM-14LJ PDF预览

BCR20PM-14LJ

更新时间: 2022-04-20 21:56:27
品牌 Logo 应用领域
瑞萨 - RENESAS 可控硅
页数 文件大小 规格书
8页 108K
描述
700V - 20A - Triac Medium Power Use

BCR20PM-14LJ 数据手册

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BCR20PM-14LJ  
Preliminary  
Electrical Characteristics  
Rated value  
Parameter  
Symbol  
Unit  
Test conditions  
Min.  
Typ.  
Max.  
3.0  
Repetitive peak off-state current  
On-state voltage  
IDRM  
VTM  
mA  
V
Tj = 150C, VDRM applied  
1.5  
Tc = 25C, ITM = 30A,  
instantaneous measurement  
Gate trigger voltageNote2  
  
  
VFGT  
1.5  
1.5  
1.5  
30  
V
V
Tj = 25C, VD = 6 V, RL = 6 ,  
RG = 330   
VRGT  
VRGT  
V
  
Gate trigger curentNote2  
IFGT  
mA  
mA  
mA  
Tj = 25C, VD = 6 V, RL = 6 ,  
RG = 330   
  
  
IRGT  
30  
IRGT  
30  
  
Gate non-trigger voltage  
Thermal resistance  
VGD  
0.2  
0.1  
10  
1
V
Tj = 125C, VD = 1/2 VDRM  
Tj = 150C, VD = 1/2 VDRM  
Junction to caseNote3  
Tj = 125C  
Rth (j-c)  
3.2  
C/W  
V/s  
Critical-rate of rise of off-state  
commutation voltageNote4  
(dv/dt)c  
Tj = 150C  
Notes: 1. Gate open.  
2. Measurement using the gate trigger characteristics measurement circuit.  
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.  
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.  
5. Make sure that your finished product containing this device meets your safe isolation requirements.  
For safety, it's advisable that heatsink is electrically floating.  
Commutating voltage and current waveforms  
Test conditions  
(inductive load)  
1. Junction temperature  
Time  
Supply Voltage  
Tj = 125/150C  
2. Rate of decay of on-state commutating current  
(di/dt)c = –10 A/ms  
(di/dt)c  
Time  
Time  
Main Current  
Main Voltage  
3. Peak off-state voltage  
VD = 400 V  
(dv/dt)c  
V
D
R07DS0982EJ0100 Rev.1.00  
Dec 03, 2012  
Page 2 of 7  

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