BCR16PM-12LD-A8

更新时间： 2024-02-15 15:17:47

品牌	Logo	应用领域
瑞萨 - RENESAS		可控硅
页数	文件大小	规格书
8页	119K
描述
Triac Medium Power Use

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数据手册

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BCR16PM-12LD-A8 数据手册

BCR16PM-12LD

Performance Curves

Maximum On-State Characteristics

Rated Surge On-State Current

10²

120

100

Tj = 25°C

10¹

10⁰

10^–1

10⁰

5 7 10¹

5 7 10²

0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8

On-State Voltage (V)

Conduction Time (Cycles at 60Hz)

Gate Trigger Current vs.

Junction Temperature

Gate Characteristics (I, II and III)

10²

10³

Typical Example

10¹

I_RGTIII

= 10 V

= 5 W

G(AV)

= 0.5 W

10²

10⁰

= 1.5 V

I_FGTI

= 2 A

FGT I

RGT I

RGT III

I_RGTI

= 0.2 V

10¹

10^–1

10¹

5 710²

5 710³

5 710⁴

–60–40–20 0 20 40 60 80 100120140160

Gate Current (mA)

Junction Temperature (°C)

Gate Trigger Voltage vs.

Junction Temperature

Maximum Transient Thermal Impedance

Characteristics (Junction to case)

10²

5 710³

5 710⁴

10³

5.0

Typical Example

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

10²

10¹

10^–1

5 710⁰

5 710¹

5 710²

–60–40–20 0 20 40 60 80 100120140160

Junction Temperature (°C)

Conduction Time (Cycles at 60 Hz)

REJ03G1562-0100 Rev.1.00 Jul 06, 2007

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