BCR16FM-12LB
Preliminary
Electrical Characteristics
Rated value
Parameter
Symbol
Unit
Test conditions
Min.
—
Typ.
—
Max.
2.0
Repetitive peak off-state current
On-state voltage
IDRM
VTM
mA
V
Tj = 150°C, VDRM applied
Tc = 25°C, ITM = 25A,
—
—
1.5
instantaneous measurement
Gate trigger voltageNote2
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
VFGT
—
—
—
—
—
—
—
—
—
—
—
—
1.5
1.5
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Ι
VRGT
Ι
VRGT
1.5
V
ΙΙΙ
Gate trigger curentNote2
IFGT
30 Note5
30 Note5
30 Note5
mA
mA
mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Ι
IRGT
Ι
IRGT
ΙΙΙ
Gate non-trigger voltage
Thermal resistance
VGD
0.2
0.1
—
10
1
—
—
—
—
—
—
—
V
Tj = 125°C, VD = 1/2 VDRM
Tj = 150°C, VD = 1/2 VDRM
Junction to caseNote3
Tj = 125°C
Rth (j-c)
2.9
—
°C/W
V/μs
Critical-rate of rise of off-state
commutation voltageNote4
(dv/dt)c
—
Tj = 150°C
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact themal resistance Rth (c-f) in case of greasing is 0.5°C /W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
5. High sensitivity (IGT ≤ 20mA) is also available.(IGT item:1)
6. Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Commutating voltage and current waveforms
Test conditions
(inductive load)
1. Junction temperature
Time
(di/dt)c
Time
Supply Voltage
Tj = 125/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = –8.0A/ms
Main Current
Main Voltage
Time
3. Peak off-state voltage
VD = 400 V
(dv/dt)c
V
D
R07DS1188EJ0100 Rev.1.00
Mar 26, 2014
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