MITSUBISHI SEMICONDUCTOR TRIAC
BCR16HM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
Dimensions
BCR16HM
OUTLINE DRAWING
in mm
2
39.2 MAX
20.2 MAX
2-φ4.2
5.0 MIN
3
2
20.1 MAX
21.6 MAX
30.0±0.2
1
3
1
T
T
1
2
TERMINAL
TERMINAL
1
2
3
7.0
7.0
GATE TERMINAL
8.25
φ1.55(G)
φ2.0(T1,T2)
6.35
1.5
GATE
TERMINAL
INDICATION
T
1
TERMINAL
INDICATION
• IT (RMS) ...................................................................... 16A
• VDRM ..............................................................400V/600V
• IFGT !, IRGT !, IRGT # ...........................................30mA
• Viso........................................................................ 2200V
• UL Recognized: File No. E80276
TRADEMARK
3-φ1.3
TYPE
NAME
LOT No.
VOLTAGE
CLASS
Tb TEST POINT
BCR16HM (C TYPE)
APPLICATION
Contactless AC switches, light dimmer,
on/off and speed control of small induction motors, on/off control of copier lamps,
microwave ovens
MAXIMUM RATINGS
Voltage class
Symbol
Parameter
Unit
8
12
✽1
VDRM
VDSM
Repetitive peak off-state voltage
400
500
600
720
V
V
✽1
Non-repetitive peak off-state voltage
Symbol
Parameter
RMS on-state current
Surge on-state current
Conditions
Ratings
16
Unit
A
Commercial frequency, sine full wave, 360° conduction,
Tb=82°C
IT (RMS)
ITSM
60Hz sinewave 1 full cycle, peak value, non-repetitive
170
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
2
2
2
I t
I t for fusing
121
A s
PGM
PG (AV)
VGM
IGM
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
5
W
W
0.5
10
2
V
Peak gate current
A
Tj
Junction temperature
Storage temperature
–40 ~ +125
–40 ~ +125
15
°C
°C
kg·cm
N·m
g
Tstg
—
Mounting torque
Screw M4
1.47
—
Weight
26
Viso
Isolation voltage
Ta=25°C, AC 1 minute, T2 · T1 · G terminal to base
2200
V
✽1. Gate open.
Feb.1999