Datasheet > BCR16FM-14LB

BCR16FM-14LB

更新时间： 2024-11-21 14:56:23

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
9页	519K
描述
700V - 16A - Triac Medium Power Use

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数据手册

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BCR16FM-14LB 数据手册

Data Sheet

BCR16FM-14LB

700V - 16A - Triac

R07DS1189EJ0400

Rev.4.00

Medium Power Use

Jan. 15, 2019

Features

•

I_{T (RMS)}: 16 A

•

Insulated Type

Planar Passivation Type

Viso: 2000V

V_DRM: 800 V (Tj=125C)

Tj: 150 °C

I_FGTI, I_RGTI, I_{RGT III}:30 mA(20mA) ^Note6

Outline

RENESAS Package code: PRSS0003AG-A

(Package name: TO-220FP)

RENESAS Package code: PRSS0003AP-A

(Package name: TO-220FPA)

Ordering code

#BH0

#BG0

Ordering code

#BB0

#FA0

1. T₁Terminal

2. T₂Terminal

3. Gate Terminal

#FG0

Application

Power supply, motor control, heater control, solid state relay, and other general purpose AC control applications.

Maximum Ratings

Parameter

Symbol

V_DRM

Voltage class

Unit

Conditions

Repetitive peak off-state voltage^Note1

Non-repetitive peak off-state voltage^Note1

800

700

840

Tj=125C

Tj=150C

V_DSM

Parameter

Symbol

Ratings

Unit

Conditions

RMS on-state current

I_{T (RMS)}

Commercial frequency, sine full wave

360conduction,

Tc = 98C (#BH0, #BB0)^Note2

Tc = 87C (#BG0, #FG0, #FA0)^Note2

50 Hz sinewave 1 full cycle, peak value,

non-repetitive

Surge on-state current

I²t for fusion

I_TSM

I²t

160

106.5

A²s

Value corresponding to 1 cycle of half wave

50 Hz, surge on-state current

Peak gate power dissipation

Average gate power dissipation

Peak gate voltage

P_GM

P_{G (AV)}

V_GM

I_GM

0.5

Peak gate current

Junction Temperature

Storage temperature

Isolation voltage ^Note7

–40 to +150

2000

C

Tstg

V_iso

Ta=25C, AC 1 minute,

T₁• T₂• G terminal to case

Notes: 1. Gate open.

2. Please refer to the Ordering Information.

R07DS1189EJ0400 Rev.4.00

Jan. 15, 2019

Page 1 of 8

12 3 4 5 6 7...9

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