Datasheet > BCR12CM-16LB#B00

BCR12CM-16LB#B00

更新时间： 2024-01-26 06:53:32

品牌	Logo	应用领域
瑞萨 - RENESAS		栅三端双向交流开关栅极
页数	文件大小	规格书
8页	95K
描述
TRIAC

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技术参数
数据手册

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BCR12CM-16LB#B00 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.78	换向电压的临界上升率-最小值：	1 V/us
最大直流栅极触发电流：	30 mA	最大直流栅极触发电压：	1.5 V
最大漏电流：	2 mA	最高工作温度：	150 °C
最低工作温度：	-40 °C	最大均方根通态电流：	12 A
断态重复峰值电压：	800 V	子类别：	TRIACs
表面贴装：	NO	触发设备类型：	TRIAC
Base Number Matches：	1

BCR12CM-16LB#B00 数据手册

BCR12CM-16LB

Preliminary

Electrical Characteristics

Parameter

Repetitive peak off-state current

On-state voltage

Symbol

I_DRM

Min.

—

Typ.

—

Max.

2.0

Unit

Test conditions

Tj = 150C, V_DRMapplied

V_TM

—

1.6

Tc = 25C, I_TM= 20 A,

instantaneous measurement

Gate trigger voltage^Note2









V_FGT

—

1.5

Tj = 25C, V_D= 6 V, R_L= 6 ,

R_G= 330 



V_RGT



V_RGT



Gate trigger curent^Note2

I_FGT

Tj = 25C, V_D= 6 V, R_L= 6 ,

R_G= 330 







I_RGT



I_RGT



Gate non-trigger voltage

Thermal resistance

V_GD

0.2

0.1

—

Tj = 125C, V_D= 1/2 V_DRM

Tj = 150C, V_D= 1/2 V_DRM

Junction to case^Note3,4

Tj = 125C

R_{th (j-c)}

1.8

—

C/W

V/s

Critical-rate of rise of off-state

commutation voltage^Note5

(dv/dt)c

—

Tj = 150C

Notes: 1. Gate open.

2. Measurement using the gate trigger characteristics measurement circuit.

3. Case temperature is measured at the T₂tab 1.5 mm apart from the molded case.

4. The contact thermal resistance R_{th (c-f)}in case of greasing is 1.0C/W.

5. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.

Test conditions

Commutating voltage and current waveforms

(inductive load)

1. Junction temperature

Time

Supply Voltage

Tj = 125C/150C

2. Rate of decay of on-state commutating current

(di/dt)c = –6 A/ms

(di/dt)c

Time

Main Current

Main Voltage

3. Peak off-state voltage

V_D= 400 V

(dv/dt)c

R07DS0976EJ0100 Rev.1.00

Nov 28, 2012

Page 2 of 7

123 4 5 6 7 8

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