Datasheet > BCR08ES-14AT14B10

BCR08ES-14AT14B10

更新时间： 2022-05-28 10:36:18

品牌	Logo	应用领域
瑞萨 - RENESAS		可控硅
页数	文件大小	规格书
4页	102K
描述
700V - 0.8A - Triac Low Power Use

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BCR08ES-14AT14B10 数据手册

浏览型号BCR08ES-14AT14B10的Datasheet PDF文件第2页

浏览型号BCR08ES-14AT14B10的Datasheet PDF文件第3页

Preliminary Datasheet

BCR08ES-14A

R07DS0971EJ0001

Rev.0.01

700V - 0.8A - Triac

Low Power Use

Nov 28, 2012

Features



I_{T (RMS)}: 0.8 A

_DRM: 700 V



Non-Insulated Type

Planar Passivation Type

Surface Mounted Type

Completed Pb Free

_FGTI, I_RGTI, I_RGTIII: 5 mA or 10mA

mode trigger is available (#B11, #B12)

Outline

RENESAS Package code: PLZZ0004CA-A)

Package name: UPAK)

(

2, 4

1. Gate Terminal

2. T₂Terminal

3. T₁Terminal

4. T₂Terminal

Applications

Hybrid IC, solid state relay, electric fan, washing machine, and other general purpose control applications

Maximum Ratings

Voltage class

Parameter

Symbol

Unit

Repetitive peak off-state voltage^Note1

Non- repetitive peak off-state voltage^Note1

V_DRM

V_DSM

700

840

Parameter

Symbol

Ratings

Unit

Conditions

RMS on-state current

I_{T (RMS)}

I_TSM

I²t

0.8

Commercial frequency, sine full wave

360° conduction, Ta= 40°C^Note3

Surge on-state current

I²t for fusing

60 Hz sinewave 1 full cycle, peak value,

non-repetitive

0.26

A²s

Value corresponding to 1 cycle of half

wave 60 Hz, surge on-state current

Peak gate power dissipation

Average gate power dissipation

Peak gate voltage

P_GM

P_{G (AV)}

V_GM

I_GM

0.1

0.5

Peak gate current

Junction temperature

Storage temperature

Mass

– 40 to +125

°C

Tstg

—

Typical value

R07DS0971EJ0001 Rev.0.01

Nov 28, 2012

Page 1 of 3

12 3 4

下载PDF

与BCR08ES-14AT14B10相关器件

型号	品牌	描述	获取价格	数据表
BCR08ES-14AT14B11	RENESAS	700V - 0.8A - Triac Low Power Use	获取价格
BCR08ES-14AT14B12	RENESAS	700V - 0.8A - Triac Low Power Use	获取价格
BCR08PN	INFINEON	NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, d	获取价格
BCR08PN_07	INFINEON	NPN/PNP Silicon Digital Transistor Array	获取价格
BCR08PN-E6327	INFINEON	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon	获取价格
BCR08PNE6327BTSA1	INFINEON	Small Signal Bipolar Transistor,	获取价格