Datasheet > BCM53DS

BCM53DS

更新时间： 2024-10-02 11:16:03

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	239K
描述
80 V, 1 A PNP/PNP matched double transistorsProduction

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BCM53DS 数据手册

BCM53DS

80 V, 1 A PNP/PNP matched double transistors

10 April 2018

Product data sheet

1. General description

PNP/PNP matched double transistors in a small SOT457 (SC-74) Surface-Mounted Device (SMD)

plastic package.

NPN/NPN complement: BCM56DS

2. Features and benefits

•

High collector current capability I_Cand I_CM

•

Reduces component count

Reduces pick and place costs

Current gain matching 5%

Application-optimized pinout

AEC-Q101 qualified

3. Applications

•

Current mirror

Differential amplifier

Linear voltage regulators

MOSFET drivers

High-side switches

Power management

Amplifiers

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

V_CEO

collector-emitter

voltage

open base

-80

I_C

collector current

-1

I_CM

peak collector current single pulse; t_p≤ 1 ms

-2

h_FE

DC current gain

V_CE= -2 V; I_C= -150 mA; T_amb= 25 °C [1]

250

Per device

h_FE1/h_FE2

DC current gain

matching

V_CE= -5 V; I_C= -2 mA; T_amb= 25 °C

0.95

1.05

12 3 4 5 6 7...13

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