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BC848B PDF预览

BC848B

更新时间: 2024-02-14 13:49:23
品牌 Logo 应用领域
德欧泰克 - DIOTEC /
页数 文件大小 规格书
2页 126K
描述
Surface mount Si-Epitaxial PlanarTransistors

BC848B 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
风险等级:5.56Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):110
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BC848B 数据手册

 浏览型号BC848B的Datasheet PDF文件第2页 
BC 846 ... BC 850  
NPN  
General Purpose Transistors  
Surface mount Si-Epitaxial PlanarTransistors  
NPN  
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage  
Power dissipation – Verlustleistung  
250 mW  
±0.1  
Plastic case  
SOT-23  
1.1  
2.9  
0.4  
Kunststoffgehäuse  
(TO-236)  
3
Type  
Code  
Weight approx. – Gewicht ca.  
0.01 g  
2
1
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
1.9  
Standard packaging taped and reeled  
Standard Lieferform gegurtet auf Rolle  
Dimensions / Maße in mm  
1 = B 2 = E 3 = C  
Maximum ratings (TA = 25C)  
Grenzwerte (TA = 25C)  
BC 846  
65 V  
80 V  
BC 847/850 BC 848/849  
Collector-Emitter-voltage  
Collector-Base-voltage  
Emitter-Base-voltage  
Power dissipation – Verlustleistung  
Collector current – Kollektorstrom (DC)  
B open  
E open  
C open  
VCE0  
VCB0  
VEB0  
Ptot  
45 V  
50 V  
30 V  
30 V  
6 V  
5 V  
250 mW 1)  
100 mA  
IC  
Peak Collector current – Kollektor-Spitzenstrom ICM  
200 mA  
Peak Base current – Basis-Spitzenstrom  
Peak Emitter current – Emitter-Spitzenstrom  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
IBM  
- IEM  
Tj  
200 mA  
200 mA  
150C  
- 65…+ 150C  
TS  
Characteristics (Tj = 25C)  
Kennwerte (Tj = 25C)  
Group A  
Group B  
Group C  
DC current gain – Kollektor-Basis-Stromverhältnis 2)  
VCE = 5 V, IC = 10 A  
VCE = 5 V, IC = 2 mA  
hFE  
hFE  
typ. 90  
110...220  
typ. 150  
200...450  
typ. 270  
420...800  
h-Parameters at VCE = 5V, IC = 2 mA, f = 1 kHz  
Small signal current gain  
hfe  
typ. 220  
typ. 330  
typ. 600  
Kleinsignal-Stromverstärkung  
Input impedance – Eingangs-Impedanz  
Output admittance – Ausgangs-Leitwert  
hie  
hoe  
1.6...4.5 kꢁ  
18 < 30 S  
3.2...8.5 kꢁ  
30 < 60 S  
6...15 kꢁ  
60 < 110 S  
Reverse voltage transfer ratio  
Spannungsrückwirkung  
hre  
typ.1.5 *10-4  
typ. 2 *10-4  
typ. 3 *10-4  
1
2
)
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal  
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß  
Tested with pulses tp = 300 s, duty cycle 2% – Gemessen mit Impulsen tp = 300 s, Schaltverhältnis 2%  
10  
01.11.2003  

BC848B 替代型号

型号 品牌 替代类型 描述 数据表
BC849C DIOTEC

完全替代

Surface mount Si-Epitaxial PlanarTransistors
BC848C DIOTEC

完全替代

Surface mount Si-Epitaxial PlanarTransistors
BC847A DIOTEC

完全替代

Surface mount Si-Epitaxial PlanarTransistors

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