BC847B

更新时间： 2024-01-06 19:20:50

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体放大器晶体管光电二极管 IOT
页数	文件大小	规格书
12页	394K
描述
NPN General Purpose Amplifier

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中文翻译

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技术参数
数据手册

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BC847B 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
JESD-609代码：	e3	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

BC847B 数据手册

BC846A

BC846B

BC847A

BC847B

BC847C

SOT-23

Mark: 1A. / 1B.

SOT-23

Mark: 1E. / 1F. / 1G.

NPN General Purpose Amplifier

This device is designed for low noise, high gain, general purpose

amplifier applications at collector currents from 1.0 µA to 50 mA.

Sourced from Process 07.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

Collector-Emitter Voltage

Collector-Base Voltage

6.0

BC846 series

BC847 series

BC846 series

BC847 series

V_CES

V_EBO

I_C

Emitter-Base Voltage

Collector Current - Continuous

100

Operating and Storage Junction Temperature Range

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

*BC846 / BC847

P_D

Total Device Dissipation

Derate above 25 C

325

2.8

mW/ C

Thermal Resistance, Junction to Ambient

357

R_θ

C/W

*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

1997 Fairchild Semiconductor Corporation

12 3 4 5 6 7...12

中文翻译

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