BC556/557/558
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
-80
UNIT
BC556
BC557
BC558
BC556
BC557
BC558
V
V
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
-50
-30
V
-65
V
VCEO
-45
V
-30
V
Emitter-Base Voltage
VEBO
IC
-5
V
Collector Current (DC)
Power Collector Dissipation
-100
625
mA
mW
mW/°C
°C
°C
PC
Linear Derating Factor above (Ta=25°C)
Junction Temperature
5
TJ
150
Storage Temperature
TSTG
-55~+150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
200
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJc
83.3
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
BC556
BC557
BC558
BC556
BC557
BC558
-65
-45
-30
-80
-50
-30
-5.0
V
V
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
BVCEO IC=-10mA, IB=0
V
V
BVCBO IC=-100μA
V
V
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
DC Current Gain
BVEBO IE=-10μA, IC=0
V
ICBO
hFE
IE = 0, VCB =-30 V
-15
nA
VCE =-5V, IC=2mA
110
800
IC =-10mA, IB=-0.5mA
IC =-100mA, IB=-5mA
IC =-10mA, IB =-0.5mA
IC =-100mA, IB=-5mA
VCE =-5 V,IC=-2mA
-90 -300 mV
-250 -650 mV
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
VCE(SAT)
VBE(SAT)
VBE(ON)
-700
-900
mV
mV
-600 -660 -750 mV
-800 mV
VCE =-5 V,IC=-10mA
VCE=-5V, IC=-10mA, f =10MHz
VCB=-10V, IE=0, f=1MHz
Current Gain Bandwidth Product
Output Capacitance
fT
150
MHz
pF
COB
6
V
CE=-5V, IC=-200μA
Noise Figure
NF
2
10
dB
f=1KHz, RG=2KΩ
CLASSIFICATION OF hFE
RANK
hFE
A
B
C
110 - 220
200 - 450
420 - 800
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R201-051.C
www.unisonic.com.tw