5秒后页面跳转
BC559 PDF预览

BC559

更新时间: 2024-01-12 20:17:42
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管
页数 文件大小 规格书
6页 255K
描述
Small Signal Transistors (PNP)

BC559 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.37
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):125
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.65 VBase Number Matches:1

BC559 数据手册

 浏览型号BC559的Datasheet PDF文件第2页浏览型号BC559的Datasheet PDF文件第3页浏览型号BC559的Datasheet PDF文件第4页浏览型号BC559的Datasheet PDF文件第5页浏览型号BC559的Datasheet PDF文件第6页 
BC556 THRU BC559  
Small Signal Transistors (PNP)  
TO-92  
FEATURES  
PNP Silicon Epitaxial Planar Transistors for  
switching and AF amplifier applications.  
.142 (3.6)  
.181 (4.6)  
These transistors are subdivided into  
three groups A, B and C according to  
their current gain. The type BC556 is avail-  
able in groups A and B, however, the types  
BC557 and BC558 can be supplied in all three  
groups. The BC559 is a low-noise type available  
in all three groups. As complementary types, the  
NPN transistors BC546 … BC549 are recommended.  
.
.022 (0.55)  
.098 (2.5)  
max  
On special request, these transistors are also manufac-  
tured in the pin configuration TO-18.  
E
C
MECHANICAL DATA  
Case: TO-92 Plastic Package  
Weight: approx. 0.18 g  
B
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at  
ambient temperature unless otherwise specified  
25 °C  
Symbol  
Value  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
BC556  
BC557  
BC558, BC559  
–V  
–V  
–V  
80  
50  
30  
V
V
V
CBO  
CBO  
CBO  
BC556  
BC557  
BC558, BC559  
–V  
–V  
–V  
80  
50  
30  
V
V
V
CES  
CES  
CES  
BC556  
BC557  
BC558, BC559  
–V  
–V  
–V  
65  
45  
30  
V
V
V
CEO  
CEO  
CEO  
Emitter-Base Voltage  
Collector Current  
–V  
5
V
EBO  
–I  
–I  
–I  
100  
mA  
mA  
mA  
mA  
mW  
°C  
C
Peak Collector Current  
Peak Base Current  
Peak Emitter Current  
200  
CM  
BM  
200  
I
200  
EM  
Power Dissipation at T  
= 25 °C  
P
tot  
5001)  
150  
amb  
Junction Temperature  
T
T
j
Storage Temperature Range  
–65 to +150  
°C  
S
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.  
4/98  

与BC559相关器件

型号 品牌 描述 获取价格 数据表
BC559/D ETC Low Noise Transistors

获取价格

BC559/D10Z TI 100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

获取价格

BC559/D11Z TI 100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

获取价格

BC559/D26Z TI 100mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

获取价格

BC559/D27Z TI 100mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

获取价格

BC559/D28Z TI 100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

获取价格