BC369ZL1G

更新时间： 2024-02-09 09:43:26

品牌	Logo	应用领域
安森美 - ONSEMI		晶体放大器晶体管
页数	文件大小	规格书
4页	67K
描述
Amplifier Transistors

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数据手册

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BC369ZL1G 数据手册

BC368 (NPN), BC369 (PNP)

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(I = 10 mA, I = 0)

−

Vdc

(BR)CEO

(BR)CBO

(BR)EBO

Collector−Base Breakdown Voltage

(I = 100 mA, I = 0 )

Emitter−Base Breakdown Voltage

(I = 100 mA, I = 0)

5.0

Collector Cutoff Current

(V = 25 V, I = 0)

CBO

−

1.0

mAdc

(V = 25 V, I = 0, T = 150°C)

Emitter Cutoff Current

(V = 5.0 V, I = 0)

−

mAdc

EBO

ON CHARACTERISTICS

DC Current Gain

−

(V = 10 V, I = 5.0 mA)

170

−

(V = 1.0 V, I = 0.5 A)

BC368, 369

BC368−25

375

−

(V = 1.0 V, I = 1.0 A)

Bandwidth Product (I = 10 mA, V = 5.0 V, f = 20 MHz)

−

MHz

Collector−Emitter Saturation Voltage (I = 1.0 A, I = 100 mA)

CE(sat)

0.5

1.0

Base−Emitter On Voltage (I = 1.0 A, V = 1.0 V)

BE(on)

−

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