BC328-25RLRA

更新时间： 2024-01-18 21:02:19

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体放大器小信号双极晶体管
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BC328-25RLRA 数据手册

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by BC327/D

SEMICONDUCTOR TECHNICAL DATA

PNP Silicon

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

BC327 BC328

Unit

Vdc

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

CEO

CBO

EBO

–45

–50

–25

–30

Vdc

–5.0

Vdc

Collector Current — Continuous

–800

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watt

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I = –10 mA, I = 0)

Vdc

(BR)CEO

BC327

BC328

–45

–25

—

Collector–Emitter Breakdown Voltage

(I = –100 µA, I = 0)

(BR)CES

(BR)EBO

BC327

BC328

–50

–30

—

Emitter–Base Breakdown Voltage

(I = –10 A, I = 0)

–5.0

—

Vdc

Collector Cutoff Current

nAdc

CBO

= –30 V, I = 0)

BC327

BC328

—

–100

= –20 V, I = 0)

Collector Cutoff Current

nAdc

CES

= –45 V, V

= –25 V, V

= 0)

BC327

BC328

—

–100

Emitter Cutoff Current

(V = –4.0 V, I = 0)

—

–100

EBO

M_Mot_oo_tor_ro_ol_la_a,S_Inm_{c. 1}a₉ll₉–₆Signal Transistors, FETs and Diodes Device Data

12 3 4

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