ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I = 10 µA, V
C CE
h
FE
—
= 5.0 V)
BC237A
BC237B/238B
BC237C/238C/239C
—
—
—
90
150
270
—
—
—
(I = 2.0 mA, V
CE
= 5.0 V)
= 5.0 V)
BC237
BC239
BC237A
BC237B/238B
BC237C/238C/239C
120
120
120
200
380
—
—
170
290
500
800
800
220
460
800
C
(I = 100 mA, V
C CE
BC237A
BC237B/238B
BC237C/238C/239C
—
—
—
120
180
300
—
—
—
Collector–Emitter On Voltage
(I = 10 mA, I = 0.5 mA)
V
V
V
CE(sat)
BC237/BC238/BC239
BC237/BC239
BC238
—
—
0.07
0.2
0.2
0.6
0.8
C
B
(I = 100 mA, I = 5.0 mA)
C
B
Base–Emitter Saturation Voltage
(I = 10 mA, I = 0.5 mA)
V
V
BE(sat)
—
—
0.6
—
0.83
1.05
C
C
B
B
(I = 100 mA, I = 5.0 mA)
Base–Emitter On Voltage
V
BE(on)
(I = 100 µA, V
= 5.0 V)
= 5.0 V)
= 5.0 V)
—
0.55
—
0.5
0.62
0.83
—
0.7
—
C
CE
CE
CE
(I = 2.0 mA, V
C
(I = 100 mA, V
C
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
f
T
MHz
(I = 0.5 mA, V
= 3.0 V, f = 100 MHz)
BC237
BC238
BC239
—
—
—
100
120
140
—
—
—
C
CE
(I = 10 mA, V
= 5.0 V, f = 100 MHz)
BC237
BC238
BC239
150
150
150
200
240
280
—
—
—
C
CE
Collector–Base Capacitance
(V = 10 V, I = 0, f = 1.0 MHz)
C
—
—
4.5
pF
pF
dB
obo
CB
Emitter–Base Capacitance
(V = 0.5 V, I = 0, f = 1.0 MHz)
C
C
—
8.0
—
ibo
EB
Noise Figure
C
NF
(I = 0.2 mA, V
C
= 5.0 V, R = 2.0 kΩ,
S
CE
f = 1.0 kHz)
BC239
—
2.0
4.0
(I = 0.2 mA, V
f = 1.0 kHz, ∆f = 200 Hz)
= 5.0 V, R = 2.0 kΩ,
S
C
CE
BC237
BC238
BC239
—
—
—
2.0
2.0
2.0
10
10
4.0
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data