Datasheet > BAV99W

BAV99W

更新时间： 2023-12-06 20:13:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	244K
描述
100 V/0.15 A Switching diode, SOT-323(USM)

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BAV99W 数据手册

BAV99W

Switching Diodes Silicon Epitaxial Planar

BAV99W

1. Applications

•

High-Speed Switching

2. Packaging and Internal Circuit

1: Anode 1

2: Cathode 2

3: Cathode 1/Anode 2

USM

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

Characteristics

Peak reverse voltage

Symbol

Note

Rating

Unit

VRM

100

Reverse voltage

Peak forward current

IFM

(Note 1)

(Note 2)

500

Average rectified current

Non-repetitive peak forward surge current

Power dissipation

150

IFSM

(Note 2), (Note 3)



100

Junction temperature

Storage temperature

150

Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Unit rating. Total rating = Unit rating × 40%

Note 2: Unit rating. Total rating = Unit rating × 70%

Note 3: Measured with a 10 ms pulse.

Start of commercial production

2016-08

Toshiba Electronic Devices & Storage Corporation

2017-12-21

Rev.2.0

12 3 4 5 6

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BAV99W/T1	ETC	获取价格	DIODE SOT 323 SCHALT
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