Datasheet > BAV170_0805

BAV170_0805

更新时间： 2024-01-16 15:35:36

品牌	Logo	应用领域
美台 - DIODES		二极管
页数	文件大小	规格书
3页	111K
描述
DUAL SURFACE MOUNT LOW LEAKAGE DIODE

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中文翻译

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BAV170_0805 数据手册

BAV170

DUAL SURFACE MOUNT LOW LEAKAGE DIODE

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Features

Mechanical Data

•

Surface Mount Package Ideally Suited for Automated Insertion

Very Low Leakage Current

Lead, Halogen and Antimony Free, RoHS Compliant

"Green" Device (Notes 3 and 4)

Qualified to AEC-Q101 Standards for High Reliability

•

Case: SOT-23

Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals: Solderable per MIL-STD-202, Method 208

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

•

Polarity: See Diagram

Marking Information: See page 2

Ordering Information: See Page 2

Weight: 0.008 grams (approximate)

SOT-23

TOP VIEW

Internal Schematic

Maximum Ratings @T = 25°C unless otherwise specified

Characteristic

Symbol

V_RRM

V_RWM

V_R

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

V_R(RMS)

Forward Continuous Current (Note 1)

Single Diode

Double Diode

215

125

500

I_FM

Repetitive Peak Forward Current

I_FRM

4.0

1.0

0.5

Non-Repetitive Peak Forward Surge Current

@ t = 1.0μs

@ t = 1.0ms

@ t = 1.0s

I_FSM

Thermal Characteristics

Characteristic

Symbol

P_D

Value

250

Unit

Power Dissipation (Note 1)

Thermal Resistance Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

500

°C/W

°C

R_θ

T_J, T_STG

-65 to +150

Electrical Characteristics @T = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 2)

V_(BR)R

⎯

I_R= 100μA

I_F= 1.0mA

I_F= 10mA

I_F= 50mA

I_F= 150mA

V_R= 75V

0.90

1.0

1.1

Forward Voltage

V_F

⎯

1.25

5.0

Leakage Current (Note 2)

Total Capacitance

I_R

C_T

t_rr

⎯

V_R= 75V, T_J= 150°C

⎯

V_R= 0, f = 1.0MHz

I_F= I_R= 10mA,

I_rr= 0.1 x I_R, R_L= 100Ω

Reverse Recovery Time

3.0

⎯

μs

Notes:

1. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead. Halogen and Antimony Free.

4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃Fire Retardants.

1 of 3

www.diodes.com

May 2008

BAV170

Document number: DS30234 Rev. 10 - 2

12 3

中文翻译

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与BAV170_0805相关器件

型号	品牌	获取价格	描述	数据表
BAV170_1	DIODES	获取价格	DUAL SURFACE MOUNT LOW LEAKAGE DIODE
BAV170_13	MCC	获取价格	250mW Low Leakage Diode 85 Volts
BAV170_15	DIODES	获取价格	DUAL SURFACE MOUNT LOW LEAKAGE DIODE
BAV170_18	DIODES	获取价格	DUAL SURFACE MOUNT LOW LEAKAGE DIODE
BAV170-13	DIODES	获取价格	Rectifier Diode, 2 Element, 0.215A, 85V V(RRM), Silicon, PLASTIC PACKAGE-3
BAV170-13-F	DIODES	获取价格	Rectifier Diode, 2 Element, 0.215A, 85V V(RRM), Silicon, GREEN, PLASTIC PACKAGE-3
BAV170212	NXP	获取价格	DIODE 0.215 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode
BAV170235	NXP	获取价格	DIODE 0.215 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode
BAV170-7	DIODES	获取价格	Rectifier Diode, 2 Element, 0.215A, 85V V(RRM), Silicon, PLASTIC PACKAGE-3
BAV170-7-F	DIODES	获取价格	DUAL SURFACE MOUNT LOW LEAKAGE DIODE

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