Datasheet > BAV170_13

BAV170_13

更新时间： 2024-09-23 12:51:35

品牌	Logo	应用领域
美微科 - MCC		二极管
页数	文件大小	规格书
3页	228K
描述
250mW Low Leakage Diode 85 Volts

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BAV170_13 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

BAV170

Micro Commercial Components

Features

Surface Mount Package Ideally Suited for Automatic Insertion

Very Low Leakage Current

250mW

Low Leakage Diode

85 Volts

Lead Free Finish/Rohs Compliant ("P"Suffix designates

RoHS Compliant. See ordering information)

Halogen free available upon request by adding suffix "-HF"

•

Mechanical Data

Case: SOT-23

Weight: approx. 0.008 grams

Marking Code: JX

SOT-23

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

Maximum Ratings

Symbol

Parameter

Rating

Unit

V_RRM

V_RWM

V_R(RMS)

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

RMS Reverse Voltage

Forward Continuous Current

Single diode loaded

Note1

215

125

500

I_F

Double diode loaded

Note1

I_FRM

Repetitive Peak Forward Current

Non-Repetitive Peak Forward Surge Current

@ t=1.0us

@ t=1.0ms

@ t=1.0s

Power Dissipation

INCHES

MIN

DIM

MAX

.120

.104

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

4.0

1.0

0.5

250

I_FSM

.110

.083

2.80

2.10

1.20

.89

1.78

.45

.013

.89

.085

.37

.047

.035

.070

.018

.0005

.035

.003

.015

.055

.041

.081

.024

.0039

.044

.007

.020

P_D

R_JA

T_J

K/W

^OC

Thermal Resistance Junction to Ambient Air

Junction Temperature

Storage Temperature

500

150

T_STG

-65 to +150

Note 1: Device mounted on a FR4 printed circuit board

Electrical Characteristics @ 25OC Unless Otherwise Specified

Symbol

Parameter

Reverse Breakdown Voltage

(I_R=100uAdc)

Forward Voltage ⁽¹⁾

I_F=1.0mAdc

I_F=10mAdc

Min

Typ

Max

Units

Suggested Solder

Pad Layout

V_(BR)R

---

.031

.800

---

0.9

1.0

V_F

.035

.900

I_F=50mAdc

I_F=150mAdc

1.1

1.25

.079

2.000

inches

Leakage Current

(V_R=75Vdc)

I_R

---

5.0

---

Junction Capacitance

(V_R=0, f=1.0MHz)

Reverse Recovery Time

(I_F=10mA, I_R=10mA, Irr=0.1 x I_R

R_L=100OHMS)

C_j

2.0

.037

.950

t_rr

---

3.0

.037

.950

*(1) Short duration pulse test to minimize self-heating effect.

www.mccsemi.com

Revision: B

2013/01/01

1 of 3

12 3

中文翻译

下载PDF

与BAV170_13相关器件

型号	品牌	获取价格	描述	数据表
BAV170_15	DIODES	获取价格	DUAL SURFACE MOUNT LOW LEAKAGE DIODE
BAV170_18	DIODES	获取价格	DUAL SURFACE MOUNT LOW LEAKAGE DIODE
BAV170-13	DIODES	获取价格	Rectifier Diode, 2 Element, 0.215A, 85V V(RRM), Silicon, PLASTIC PACKAGE-3
BAV170-13-F	DIODES	获取价格	Rectifier Diode, 2 Element, 0.215A, 85V V(RRM), Silicon, GREEN, PLASTIC PACKAGE-3
BAV170212	NXP	获取价格	DIODE 0.215 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode
BAV170235	NXP	获取价格	DIODE 0.215 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode
BAV170-7	DIODES	获取价格	Rectifier Diode, 2 Element, 0.215A, 85V V(RRM), Silicon, PLASTIC PACKAGE-3
BAV170-7-F	DIODES	获取价格	DUAL SURFACE MOUNT LOW LEAKAGE DIODE
BAV170-AU	PANJIT	获取价格	SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES
BAV170DW	PANJIT	获取价格	SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES

与BAV170_13相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

4
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

6
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

78
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

68

产品中心

服务支持

精选活动

关于我们

帮助中心

BAV170_13

BAV170_13 数据手册

与BAV170_13相关器件

与BAV170_13相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BAV170_13

BAV170_13 数据手册

与BAV170_13相关器件

与BAV170_13相关文章

您还可以找

您在本页遇到什么问题？