Datasheet > BAV116W

BAV116W

更新时间： 2024-04-09 18:58:26

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	800K
描述
0.215A,130V,Surface Mount Small Signal Switching Diodes

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BAV116W 数据手册

Surface Mount Low Leakage Diode

BAV116W BAV116WS BAV116WT

Thermal Characteristics

Parameter

Symbol

BAV116W

BAV116WS BAV116WT

Unit

Power Dissipation ^*2

P_D

R_ΘJA

T_J

250

500

200

625

150

834

Thermal Resistance (Junction-to-Ambient) ^*2

Operating Junction Temperature

Storage Temperature Range

°C/W

150

°C

T_STG

-55 ~ +150

Electrical Characteristics ^{(@ T}_A^{= 25℃ unless otherwise specified)}

Parameter

Symbol

Test Condition

Min. Typ. Max.

Unit

Reverse Breakdown Voltage ^*1

V_(BR)R

I_R= 100μA

130

I_F= 1.0mA

0.90

1.00

1.10

1.25

1.00

I_F= 10mA

Forward Voltage

V_F

I_F= 50mA

I_F= 150mA

I_F= 10mA, T_J=125°C

V_R= 75V, T_J= 25°C

V_R= 75V, T_J= 125°C

Maximum Peak Reverse Current ^*1

Total Capacitance

I_R

C_J

t_rr

V_R= 0, f = 1.0MHz

I_F= I_R= 10mA,

Reverse Recovery Time

Notes:

μs

I_rr= 0.1 × I_R, R_L= 100Ω

1． Short duration pulse test used to minimize self-heating effect

2． Part mounted on FR-4 PC board with recommended pad layout

SWM0124A: December 2019

www.gmesemi.com

123 4 5

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