Datasheet > BAV16BPT

BAV16BPT

更新时间： 2024-01-16 00:01:54

品牌	Logo	应用领域
SIRECT		二极管开关
页数	文件大小	规格书
2页	170K
描述
Fast Switching Diode Array - 150mAmp 75Volt

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技术参数
数据手册

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BAV16BPT 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	R-PDSO-G2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.70
风险等级：	5.62	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
JESD-30 代码：	R-PDSO-G2	湿度敏感等级：	1
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	最低工作温度：	-55 °C
最大输出电流：	0.15 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	最大功率耗散：	0.2 W
最大重复峰值反向电压：	100 V	最大反向恢复时间：	0.004 µs
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

BAV16BPT 数据手册

E L E C T R O N I C

BAV16BPT

Fast Switching Diode Array – 150mAmp 75Volt

□ Features

-For surface mounted applications

-Low profile package

-Built-in strain relief

SOD-123

-Metal silicon junction, majority carrier conduction

-Low power loss, high efficiency

-High current capability, low forward voltage drop

-For use in low voltage high frequency inverters, free wheeling and polarity

protection application

.028(0.70)

.018(0.45)

.071(1.80)

.055(1.40)

-High temperature soldering guaranteed

-High reliability

-High surge current capability

.112(2.85)

.100(2.55)

.008(0.2)

-Lead free device

-ESD sensitive product handling required

.053(1.35)

.035(0.90)

□ Mechanical data

.020(0.50)

.004(0.12)

-Case：Molded plastic

-Polarity：Color band denotes cathode end

.153(3.90)

.140(3.55)

□ Maximum ratings and Electrical characteristics

TYPE

SYMBOL

VRM

BAV16BPT

UNIT

Maximum Non-Repetitive Peak Reverse Voltage

Maximum RMS Voltage

100

VRMS

Maximum Repetitive Peak Reverse and DC Blocking Voltage

Maximum Average Forward Rectified Current

VRRM ,VDC

150

@ t = 1.0uSec

2.0

1.0

Non-Repetitive Peak Forward urge Current

IFSM

@t = 1.0Sec

@ IF = 1.0mA

0.715

0.855

1.00

1.25

1.0

@ IF = 10mA

Maximum Instantaneous Forward Voltage

@ IF = 50mA

@ IF = 150mA

@TJ = 25ºC

Maximum Average Reverse Current

μA

@TJ = 150ºC

Typical Junction Capacitance (Note 1)

TRR

2.0

4.0

Maximum Reverse Recovery Time (Note 2)

Thermal Resistance Junction to Ambient (Note 3)

nSec

RθJA

625

ºC/W

ºC

Maximum Storage and Operating Temperature Range

Note: .1.Measured at 1.0 MHz and applied reverse voltage of 0 volts

TJ , TSTG

-65 - 150

August 2007 / Rev.5

2.Measured at applied forward current of 10mA and reverse current of 10mA

3.Device mounted on FR-4 by 1 inch x 0.85 inch x 0.062 inch

http:// www.sirectsemi.com

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